Pan Jiangyong, Chen Jing, Zhao Dewei, Huang Qianqian, Khan Qasim, Liu Xiang, Tao Zhi, Zhang Zichen, Lei Wei
Opt Express. 2016 Jan 25;24(2):A33-43. doi: 10.1364/OE.24.000A33.
Surface plasmon-enhanced electroluminescence (EL) has been demonstrated by incorporating gold (Au) nanoparticles (NPs) in quantum dot light-emitting diode (QLED). Time-resolved photoluminescence (TRPL) spectroscopy reveals that the EL enhancement is ascribed to the near-field enhancement through an effective coupling between excitons of the quantum dot emitters and localized surface plasmons around Au NPs. It is found that the size of Au NPs and the distance between the Au NPs and the emissive layer have significant effects on the performance of QLED. The enhancement can be maximized as the SP resonance wavelength of Au NPs matches well with the PL emission wavelength of the QD film and the distance between Au NPs and the emissive layer maintains 15 nm. The photoluminance (PL) and EL intensity can be enhanced by 4.4 and 1.7 folds with the incorporation of Au NPs. The maximum current efficiency of 4.56 cd/A can be achieved for the resulting QLEDs by incorprating Au NPs with an enhancement factor of 2.0. In addition, the enhancement ratio of 2.2 can be achieved for the lifetime of resulting QLED.
通过在量子点发光二极管(QLED)中引入金(Au)纳米颗粒(NPs),已证明了表面等离子体激元增强电致发光(EL)。时间分辨光致发光(TRPL)光谱表明,EL增强归因于量子点发射体的激子与Au NPs周围的局域表面等离子体激元之间的有效耦合导致的近场增强。发现Au NPs的尺寸以及Au NPs与发射层之间的距离对QLED的性能有显著影响。当Au NPs的表面等离子体共振波长与量子点薄膜的光致发光发射波长良好匹配且Au NPs与发射层之间的距离保持为15 nm时,增强效果可达到最大。通过引入Au NPs,光致发光(PL)和EL强度可分别提高4.4倍和1.7倍。通过引入增强因子为2.0的Au NPs,所得QLED的最大电流效率可达4.56 cd/A。此外,所得QLED的寿命增强比可达2.2。