Fernandez Ekain, Sanchez-Garcia Jose Angel, Viviente Jose Luis, van Sint Annaland Martin, Gallucci Fausto, Tanaka David A Pacheco
Energy and Environment Division, TECNALIA, Mikeletegi Pasealekua 2, 20009 San Sebastián-Donostia, Spain.
Chemical Process Intensification, Department of Chemical Engineering and Chemistry, Eindhoven University of Technology, De Rondom 70 5612 AZ Eindhoven, The Netherlands.
Molecules. 2016 Feb 10;21(2):210. doi: 10.3390/molecules21020210.
The influence of the temperature during the growth of Pd-Ag films by PVD magnetron sputtering onto polished silicon wafers was studied in order to avoid the effect of the support roughness on the layer growth. The surfaces of the Pd-Ag membrane films were analyzed by atomic force microscopy (AFM), and the results indicate an increase of the grain size from 120 to 250-270 nm and film surface roughness from 4-5 to 10-12 nm when increasing the temperature from around 360-510 K. After selecting the conditions for obtaining the smallest grain size onto silicon wafer, thin Pd-Ag (0.5-2-µm thick) films were deposited onto different types of porous supports to study the influence of the porous support, layer thickness and target power on the selective layer microstructure and membrane properties. The Pd-Ag layers deposited onto ZrO₂ 3-nm top layer supports (smallest pore size among all tested) present high N₂ permeance in the order of 10(-6) mol·m(-2)·s(-1)·Pa(-1) at room temperature.
为避免载体粗糙度对薄膜生长的影响，研究了通过物理气相沉积磁控溅射在抛光硅片上生长钯银薄膜时温度的影响。用原子力显微镜（AFM）分析了钯银膜的表面，结果表明，当温度从360 - 510 K左右升高时，晶粒尺寸从120 nm增加到250 - 270 nm，膜表面粗糙度从4 - 5 nm增加到10 - 12 nm。在选择了在硅片上获得最小晶粒尺寸的条件后，将钯银（0.5 - 2 µm厚）薄膜沉积在不同类型的多孔载体上，以研究多孔载体、层厚度和靶功率对选择性层微观结构和膜性能的影响。沉积在ZrO₂ 3 nm顶层载体（所有测试中孔径最小）上的钯银层在室温下呈现出约10(-6) mol·m(-2)·s(-1)·Pa(-1)的高氮气渗透率。
Zotero 插件
