Zhao J L, Teo K L, Zheng K, Sun X W
Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117608, Singapore. School of Electrical & Electronic Engineering, Nanyang Technological University, Nanyang Avenue 50, 639798, Singapore.
Nanotechnology. 2016 Mar 18;27(11):115204. doi: 10.1088/0957-4484/27/11/115204. Epub 2016 Feb 15.
Well-aligned ZnO nanorods have been prepared on p-GaN-sapphire using a vapor phase transport (VPT) technique. A thin sputtered layer of TaOx is employed as the intermediate layer and an n-ZnO-TaOx-p-GaN heterojunction device has been achieved. The current transport of the heterojunction exhibited a typical resistance switching behavior, which originated from the filament forming and breaking in the TaOx layer. Color controllable electroluminescence (EL) was observed from the biased heterojunction at room temperature. Bluish-white wide band emission is achieved from the forward biased device in both the high resistance and low resistance states, while red emission can only be observed for the reverse biased device in the low resistance state. The correlation between the EL and resistance switching has been analyzed in-depth based on the interface band diagram of the heterojunction.
采用气相传输（VPT）技术在p-GaN-蓝宝石衬底上制备了取向良好的ZnO纳米棒。利用溅射的TaOx薄层高作为中间层，成功制备了n-ZnO-TaOx-p-GaN异质结器件。该异质结的电流传输表现出典型的电阻开关行为，这源于TaOx层中细丝的形成和断裂。在室温下，从偏置的异质结中观察到了颜色可控的电致发光（EL）。正向偏置的器件在高电阻和低电阻状态下均实现了蓝白色宽带发射，而反向偏置的器件仅在低电阻状态下观察到红色发射。基于异质结的界面能带图，对EL与电阻开关之间的相关性进行了深入分析。
