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用于增强光电催化能量转换的ZnO薄膜在铂纳米颗粒修饰的FTO表面上的电化学诱导溶胶-凝胶沉积。

Electrochemically induced sol-gel deposition of ZnO films on Pt-nanoparticle modified FTO surfaces for enhanced photoelectrocatalytic energy conversion.

作者信息

Gutkowski Ramona, Schuhmann Wolfgang

机构信息

Analytical Chemistry - Center for Electrochemical Science (CES), Ruhr-Universität Bochum, Universitätsstr. 150, D-44780-Bochum, Germany.

出版信息

Phys Chem Chem Phys. 2016 Apr 28;18(16):10758-63. doi: 10.1039/c5cp07678a.

Abstract

The low conductivity of transparent conductive oxides such as fluorine-doped tin oxides (FTO) has a high impact on the electrochemically induced deposition of semiconductor films for photoelectrocatalytic investigations. Furthermore, the often high recombination rate of photogenerated electron-hole pairs influences the photoelectrochemical performance of semiconductor films. In order to improve the semiconductor deposition process as well as to decrease electron-hole pair recombination, we propose modification of FTO by electrochemically induced deposition of Pt nanoparticles. The deposited Pt nanoparticles improve on the one hand the conductivity of the FTO and on the other hand they create nuclei at which the sol-gel semiconductor deposition starts. We use ZnO as a well-characterised material to evaluate the effect of the influencing parameters during electrochemically induced sol-gel deposition with respect to the incident photon-to-current efficiency (IPCE) derived from wavelength dependent photocurrent spectroscopy. Using optimised deposition parameters a substantially decreased recombination rate of photogenerated charge carriers is demonstrated, if Pt-nanoparticles are first deposited on the FTO surface. By improving the diffusion of photogenerated electrons to the Pt nanoparticles and hence to the back contact the photoelectrochemical performance of the deposited ZnO films is substantially increased.

摘要

诸如氟掺杂氧化锡(FTO)之类的透明导电氧化物的低电导率,对用于光电催化研究的半导体薄膜的电化学诱导沉积有很大影响。此外,光生电子 - 空穴对的复合率通常较高,这会影响半导体薄膜的光电化学性能。为了改善半导体沉积过程并降低电子 - 空穴对的复合,我们提出通过电化学诱导沉积铂纳米颗粒来对FTO进行改性。沉积的铂纳米颗粒一方面提高了FTO的电导率,另一方面它们形成了溶胶 - 凝胶半导体沉积开始的核。我们使用氧化锌作为一种特性明确的材料,通过波长相关光电流光谱法得到的入射光子到电流效率(IPCE),来评估电化学诱导溶胶 - 凝胶沉积过程中影响参数的作用。如果首先在FTO表面沉积铂纳米颗粒,使用优化的沉积参数可证明光生载流子的复合率大幅降低。通过改善光生电子向铂纳米颗粒进而向背接触的扩散,沉积的氧化锌薄膜的光电化学性能得到显著提高。

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