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通过化学诱导表面极化钉扎控制 BaTiO3 薄膜的压印。

Imprint Control of BaTiO3 Thin Films via Chemically Induced Surface Polarization Pinning.

机构信息

Department of Materials Science and Engineering, University of Wisconsin-Madison , Madison, Wisconsin 53706, United States.

Department of Physics and Astronomy, Nebraska Center for Materials and Nanoscience, University of Nebraska , Lincoln, Nebraska 68588, United States.

出版信息

Nano Lett. 2016 Apr 13;16(4):2400-6. doi: 10.1021/acs.nanolett.5b05188. Epub 2016 Mar 7.

Abstract

Surface-adsorbed polar molecules can significantly alter the ferroelectric properties of oxide thin films. Thus, fundamental understanding and controlling the effect of surface adsorbates are crucial for the implementation of ferroelectric thin film devices, such as ferroelectric tunnel junctions. Herein, we report an imprint control of BaTiO3 (BTO) thin films by chemically induced surface polarization pinning in the top few atomic layers of the water-exposed BTO films. Our studies based on synchrotron X-ray scattering and coherent Bragg rod analysis demonstrate that the chemically induced surface polarization is not switchable but reduces the polarization imprint and improves the bistability of ferroelectric phase in BTO tunnel junctions. We conclude that the chemical treatment of ferroelectric thin films with polar molecules may serve as a simple yet powerful strategy to enhance functional properties of ferroelectric tunnel junctions for their practical applications.

摘要

表面吸附的极性分子会显著改变氧化物薄膜的铁电性能。因此,深入理解和控制表面吸附物的影响对于铁电薄膜器件的应用至关重要,例如铁电隧道结。在本文中,我们报告了通过在暴露于水的 BTO 薄膜的顶层几个原子层中化学诱导的表面极化钉扎来控制 BaTiO3(BTO)薄膜。我们的基于同步加速器 X 射线散射和相干布拉格棒分析的研究表明,化学诱导的表面极化是不可切换的,但会降低极化印记并提高 BTO 隧道结中铁电相的双稳性。我们得出结论,用极性分子处理铁电薄膜可能是一种简单而强大的策略,可以增强铁电隧道结的功能特性,从而实现其实际应用。

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