Wei Lu-Qi, Guan Zhao, Tong Wen-Yi, Fan Wen-Cheng, Mattursun Abliz, Chen Bin-Bin, Xiang Ping-Hua, Han Genquan, Duan Chun-Gang, Zhong Ni
Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, East China Normal University, Shanghai, 200241, China.
Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi, 030006, China.
Adv Sci (Weinh). 2024 Dec;11(48):e2410354. doi: 10.1002/advs.202410354. Epub 2024 Oct 30.
The discovery of nanoscale ferroelectricity in hafnia (HfO) has paved the way for next generation high-density, non-volatile devices. Although the surface conditions of nanoscale HfO present one of the fundamental mechanism origins, the impact of external environment on HfO ferroelectricity remains unknown. In this study, the deleterious effect of ambient moisture is examined on the stability of ferroelectricity using HfZrO (HZO) films as a model system. It is found that the development of an intrinsic electric field due to the adsorption of atmospheric water molecules onto the film's surface significantly impairs the properties of domain retention and polarization stability. Nonetheless, vacuum heating efficiently counteracts the adverse effects of water adsorption, which restores the symmetric electrical characteristics and polarization stability. This work furnishes a novel perspective on previous extensive studies, demonstrating significant impact of surface water on HfO-based ferroelectrics, and establishes the design paradigm for the future evolution of HfO-based multifunctional electronic devices.
氧化铪（HfO）中纳米级铁电性的发现为下一代高密度非易失性器件铺平了道路。尽管纳米级HfO的表面条件是基本机制起源之一，但外部环境对HfO铁电性的影响仍然未知。在本研究中，以HfZrO（HZO）薄膜为模型系统，研究了环境湿度对铁电性稳定性的有害影响。研究发现，大气水分子吸附到薄膜表面会产生本征电场，这会显著损害畴保留和极化稳定性。尽管如此，真空加热有效地抵消了水吸附的不利影响，恢复了对称的电学特性和极化稳定性。这项工作为之前的广泛研究提供了一个新的视角，证明了表面水对基于HfO的铁电体有重大影响，并为基于HfO的多功能电子器件的未来发展建立了设计范式。
