Lin Shaobing, Zhang Xiaowei, Zhang Pei, Tan Dameng, Xu Jun, Li Wei, Chen Kunji
Opt Lett. 2016 Feb 1;41(3):630-3. doi: 10.1364/OL.41.000630.
Over the past decade, the possibility of near-infrared light generation and amplification on chip has attracted great interest for future monolithic integrated optical components. In this Letter, we demonstrated a CMOS-compatible method to fabricate amorphous SiO0.73 thin films doped with Bi ions. It exhibited highly improved σ(em)×τ of up to 4.2×10(-23) cm2 s and greatly enhanced near-infrared characteristic emission originated from Bi ions by nearly 60 times via Si nanocrystal size control. We anticipated that this Bi-doped near-infrared light emitter would be a new starting point for future research in the field of optoelectronic integration.
