Wako A H, Dejene F B, Swart H C
Department of Physics, University of the Free State, Phuthaditjhaba, South Africa.
Department of Physics, University of the Free State, Bloemfontein, South Africa.
Luminescence. 2016 Nov;31(7):1313-1320. doi: 10.1002/bio.3108. Epub 2016 Mar 9.
The structural and optical properties of commercially obtained Y Al O :Ce phosphor were investigated by replacing Al with Ga and Y with Gd in the Y Al O :Ce structure to form Y (Al,Ga) O :Ce and (Y,Gd) Al O :Ce . X-Ray diffraction (XRD) results showed slight 2-theta peak shifts to lower angles when Ga was used and to higher angles when Gd was used, with respect to peaks from Y Al O :Ce and JCPDS card no. 73-1370. This could be attributed to induced crystal-field effects due to the different ionic sizes of Ga and Gd compared with Al and Y . The photoluminescence (PL) spectra showed broad excitation from 350 to 550 nm with a maximum at 472 nm, and broad emission bands from 500 to 650 nm, centred at 578 nm for Y Al O :Ce arising from the 5d → 4f transition of Ce . PL revealed a blue shift for Ga substitution and a red shift for Gd substitution. UV-Vis showed two absorption peaks at 357 and 457 nm for Y Al O :Ce , with peaks shifting to 432 nm for Ga and 460 nm for Gd substitutions. Changes in the trap levels or in the depth and number of traps due to Ce were analysed using thermoluminescence (TL) spectroscopy. This revealed the existence of shallow and deep traps. It was observed that Ga substitution contributes to the shallowest traps at 74 °C and fewer deep traps at 163 °C, followed by Gd with shallow traps at 87 °C and deep traps at 146 °C. Copyright © 2016 John Wiley & Sons, Ltd.
通过在YAlO:Ce结构中用Ga取代Al以及用Gd取代Y,形成Y(Al,Ga)O:Ce和(Y,Gd)AlO:Ce,对商业获得的YAlO:Ce荧光粉的结构和光学性质进行了研究。X射线衍射(XRD)结果表明,相对于YAlO:Ce和JCPDS卡号73 - 1370的峰,当使用Ga时,2θ峰略微向低角度移动,而当使用Gd时,向高角度移动。这可能归因于与Al和Y相比,Ga和Gd的离子尺寸不同所引起的晶体场效应。光致发光(PL)光谱显示,YAlO:Ce在350至550nm范围内有宽激发峰,最大激发波长在472nm,发射带在500至650nm范围内,中心波长为578nm,这是由Ce的5d→4f跃迁引起的。PL显示Ga取代导致蓝移,Gd取代导致红移。紫外可见光谱(UV - Vis)显示YAlO:Ce在357和457nm处有两个吸收峰,Ga取代时峰移至432nm,Gd取代时峰移至460nm。使用热释光(TL)光谱分析了由于Ce导致的陷阱能级或陷阱深度和数量的变化。这揭示了浅陷阱和深陷阱的存在。观察到Ga取代在74°C时产生最浅的陷阱,在163°C时产生较少的深陷阱,其次是Gd,在87°C时有浅陷阱,在146°C时有深陷阱。版权所有©2016约翰威立父子有限公司。