Fujimori Shin-ichi
Condensed Matter Science Division, Japan Atomic Energy Agency, Hyogo 679-5148, Japan.
J Phys Condens Matter. 2016 Apr 20;28(15):153002. doi: 10.1088/0953-8984/28/15/153002. Epub 2016 Mar 14.
Recent remarkable progress in angle-resolved photoelectron spectroscopy (ARPES) has enabled the direct observation of the band structures of 4f and 5f materials. In particular, ARPES with various light sources such as lasers (hν ~ 7 eV) or high-energy synchrotron radiations (hν >/~ 400 eV) has shed light on the bulk band structures of strongly correlated materials with energy scales of a few millielectronvolts to several electronvolts. The purpose of this paper is to summarize the behaviors of 4f and 5f band structures of various rare-earth and actinide materials observed by modern ARPES techniques, and understand how they can be described using various theoretical frameworks. For 4f-electron materials, ARPES studies of CeMIn5(M = Rh, Ir, and Co) and YbRh2Si2 with various incident photon energies are summarized. We demonstrate that their 4f electronic structures are essentially described within the framework of the periodic Anderson model, and that the band-structure calculation based on the local density approximation cannot explain their low-energy electronic structures. Meanwhile, electronic structures of 5f materials exhibit wide varieties ranging from itinerant to localized states. For itinerant U5f compounds such as UFeGa5, their electronic structures can be well-described by the band-structure calculation assuming that all U5f electrons are itinerant. In contrast, the band structures of localized U5f compounds such as UPd3 and UO2 are essentially explained by the localized model that treats U5f electrons as localized core states. In regards to heavy fermion U-based compounds such as the hidden-order compound URu2Si2, their electronic structures exhibit complex behaviors. Their overall band structures are generally well-explained by the band-structure calculation, whereas the states in the vicinity of EF show some deviations due to electron correlation effects. Furthermore, the electronic structures of URu2Si2 in the paramagnetic and hidden-order phases are summarized based on various ARPES studies. The present status of the field as well as possible future directions are also discussed.
角分辨光电子能谱(ARPES)最近取得的显著进展使得直接观测4f和5f材料的能带结构成为可能。特别是,使用各种光源(如激光(hν ~ 7 eV)或高能同步辐射(hν >/~ 400 eV))的ARPES揭示了能量尺度在几毫电子伏特到几电子伏特的强关联材料的体带结构。本文的目的是总结现代ARPES技术观测到的各种稀土和锕系材料的4f和5f能带结构的行为,并理解如何使用各种理论框架来描述它们。对于4f电子材料,总结了用不同入射光子能量对CeMIn5(M = Rh、Ir和Co)以及YbRh2Si2进行的ARPES研究。我们证明,它们的4f电子结构本质上可以在周期安德森模型的框架内进行描述,并且基于局域密度近似的能带结构计算无法解释它们的低能电子结构。同时,5f材料的电子结构呈现出从巡游态到局域态的广泛变化。对于巡游性的U5f化合物,如UFeGa5,假设所有U5f电子都是巡游的,其电子结构可以通过能带结构计算很好地描述。相比之下,局域性U5f化合物,如UPd3和UO2的能带结构本质上可以用将U5f电子视为局域核心态的局域模型来解释。对于重费米子U基化合物,如隐藏序化合物URu2Si2,其电子结构表现出复杂的行为。它们的整体能带结构通常可以通过能带结构计算得到很好的解释,而费米能级附近的态由于电子关联效应显示出一些偏差。此外,基于各种ARPES研究总结了URu2Si2在顺磁相和隐藏序相的电子结构。还讨论了该领域的现状以及可能的未来发展方向。