Mateo Cherry May N, Brauch Uwe, Kahle Hermann, Schwarzbäck Thomas, Jetter Michael, Abdou Ahmed Marwan, Michler Peter, Graf Thomas
Opt Lett. 2016 Mar 15;41(6):1245-8. doi: 10.1364/OL.41.001245.
An output power of 2.5 W at a wavelength of 665 nm was obtained from a quantum-well (QW) and multipass-pumped AlGaInP-based vertical-external-cavity surface-emitting laser operated at a heat sink temperature of 10°C. Intracavity frequency doubling resulted in an output power of 820 mW at a wavelength of 333 nm. To the best of our knowledge, these are the highest continuous wave output powers from this type of laser both at the fundamental wavelength and in frequency-doubled operation. In fundamental wavelength operation, further power scaling by increasing the pump-spot size increased the output power to 3.3 W. However, at this power level, the laser was highly unstable. When the laser was operated at 50% pump duty cycle, a reproducible and stable peak output power of 3.6 W was obtained. These results demonstrate the potential of optical QW pumping combined with multipass pumping for the operation of AlGaInP-based semiconductor disk lasers.
在散热片温度为10°C的条件下，基于量子阱（QW）和多程泵浦的AlGaInP垂直外腔面发射激光器在波长665 nm处获得了2.5 W的输出功率。腔内倍频在波长333 nm处产生了820 mW的输出功率。据我们所知，这些分别是此类激光器在基波波长和倍频运行时的最高连续波输出功率。在基波波长运行中，通过增大泵浦光斑尺寸进一步提高功率，输出功率增加到了3.3 W。然而，在此功率水平下，激光器非常不稳定。当激光器以50%的泵浦占空比运行时，获得了3.6 W的可重复且稳定的峰值输出功率。这些结果证明了光学量子阱泵浦与多程泵浦相结合用于基于AlGaInP的半导体盘激光器运行的潜力。
