Uchiyama Hiroaki, Igarashi Seishirou, Kozuka Hiromitsu
Department of Chemistry and Materials Engineering, Kansai University , 3-3-35 Yamate-cho, Suita 564-8680, Japan.
Langmuir. 2016 Apr 5;32(13):3116-21. doi: 10.1021/acs.langmuir.6b00377. Epub 2016 Mar 24.
We prepared tungsten trioxide (WO3) photoelectrode films from organic-additive-free aqueous solutions by a low-speed dip-coating technique. The evaporation-driven deposition of the solutes occurred at the meniscus during low-speed dip coating, resulting in the formation of coating layer on the substrate. Homogeneous WO3 precursor films were obtained from (NH4)10W12O41·5H2O aqueous solutions and found to be crystallized to monoclinic WO3 films by the heat treatment at 400-700 °C. All the films showed a photoanodic response irrespective of the heat treatment temperature, where a good photoelectrochemical stability was observed for those heated over 500 °C. The highest photoanodic performance was observed for the WO3 film heated at 700 °C, where the IPCE (incident photon-to-current efficiency) was 36.2% and 4.6% at 300 and 400 nm, respectively.
我们通过低速浸涂技术从无有机添加剂的水溶液中制备了三氧化钨（WO₃）光电极薄膜。在低速浸涂过程中，溶质在弯月面处发生蒸发驱动沉积，从而在基底上形成涂层。从（NH₄）₁₀W₁₂O₄₁·5H₂O水溶液中获得了均匀的WO₃前驱体薄膜，并发现通过在400 - 700°C下进行热处理可将其结晶为单斜晶系的WO₃薄膜。所有薄膜均表现出光阳极响应，与热处理温度无关，其中对于加热温度超过500°C的薄膜观察到了良好的光电化学稳定性。在700°C下加热的WO₃薄膜表现出最高的光阳极性能，其在300和400 nm处的入射光子到电流效率（IPCE）分别为36.2%和4.6%。
