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由迁移率涨落引起的黑磷单晶中的大尺寸及各向异性线性磁阻。

Large and Anisotropic Linear Magnetoresistance in Single Crystals of Black Phosphorus Arising From Mobility Fluctuations.

作者信息

Hou Zhipeng, Yang Bingchao, Wang Yue, Ding Bei, Zhang Xiaoming, Yao Yuan, Liu Enke, Xi Xuekui, Wu Guangheng, Zeng Zhongming, Liu Zhongyuan, Wang Wenhong

机构信息

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.

State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinghuangdao 066004, China.

出版信息

Sci Rep. 2016 Mar 31;6:23807. doi: 10.1038/srep23807.

DOI:10.1038/srep23807
PMID:27030141
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC4814878/
Abstract

Black Phosphorus (BP) is presently attracting immense research interest on the global level due to its high mobility and suitable band gap for potential application in optoelectronics and flexible devices. It was theoretically predicted that BP has a large direction-dependent electrical and magnetotransport anisotropy. Investigations on magnetotransport of BP may therefore provide a new platform for studying the nature of electron transport in layered materials. However, to the best of our knowledge, magnetotransport studies, especially the anisotropic magnetoresistance (MR) effect in layered BP, are rarely reported. Here, we report a large linear MR up to 510% at a magnetic field of 7 Tesla in single crystals of BP. Analysis of the temperature and angle dependence of MR revealed that the large linear MR in our sample originates from mobility fluctuations. Furthermore, we reveal that the large linear MR of layered BP in fact follows a three-dimensional behavior rather than a two-dimensional one. Our results have implications to both the fundamental understanding and magnetoresistive device applications of BP.

摘要

黑磷(BP)目前在全球范围内引起了极大的研究兴趣,因为其具有高迁移率以及适用于光电子学和柔性器件潜在应用的合适带隙。从理论上预测,黑磷具有很大的与方向相关的电学和磁输运各向异性。因此,对黑磷磁输运的研究可能为研究层状材料中电子输运的本质提供一个新平台。然而,据我们所知,磁输运研究,特别是层状黑磷中的各向异性磁电阻(MR)效应,鲜有报道。在此,我们报告了在7特斯拉磁场下,黑磷单晶中高达510%的大线性磁电阻。对磁电阻的温度和角度依赖性分析表明,我们样品中的大线性磁电阻源于迁移率波动。此外,我们揭示了层状黑磷的大线性磁电阻实际上遵循三维行为而非二维行为。我们的结果对黑磷的基本理解和磁电阻器件应用都有重要意义。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a46e/4814878/9b8d2cb9a198/srep23807-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a46e/4814878/bba3911b1846/srep23807-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a46e/4814878/6180409b402c/srep23807-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a46e/4814878/56f882d7919c/srep23807-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a46e/4814878/9b8d2cb9a198/srep23807-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a46e/4814878/bba3911b1846/srep23807-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a46e/4814878/6180409b402c/srep23807-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a46e/4814878/56f882d7919c/srep23807-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a46e/4814878/9b8d2cb9a198/srep23807-f4.jpg

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本文引用的文献

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