Wiggers F B, Van Bui H, Friedlein R, Yamada-Takamura Y, Schmitz J, Kovalgin A Y, de Jong M P
MESA+ Institute for Nanotechnology, University of Twente, 7500 AE Enschede, The Netherlands.
School of Materials Science, Japan Advanced Institute of Science and Technology, Nomi, Ishikawa 923-1292, Japan.
J Chem Phys. 2016 Apr 7;144(13):134703. doi: 10.1063/1.4944579.
We present a method for the formation of an epitaxial surface layer involving B, N, and Si atoms on a ZrB2(0001) thin film on Si(111). It has the potential to be an insulating growth template for 2D semiconductors. The chemical reaction of NH3 molecules with the silicene-terminated ZrB2 surface was characterized by synchrotron-based, high-resolution core-level photoelectron spectroscopy and low-energy electron diffraction. In particular, the dissociative chemisorption of NH3 at 400 °C leads to surface nitridation, and subsequent annealing up to 830 °C results in a solid phase reaction with the ZrB2 subsurface layers. In this way, a new nitride-based epitaxial surface layer is formed with hexagonal symmetry and a single in-plane crystal orientation.
我们提出了一种在Si(111)上的ZrB2(0001)薄膜上形成包含B、N和Si原子的外延表面层的方法。它有潜力成为二维半导体的绝缘生长模板。通过基于同步加速器的高分辨率芯能级光电子能谱和低能电子衍射对NH3分子与硅烯终止的ZrB2表面的化学反应进行了表征。特别是，NH3在400 °C时的解离化学吸附导致表面氮化，随后在高达830 °C的温度下退火会与ZrB2次表面层发生固相反应。通过这种方式，形成了一种具有六边形对称性和单一平面内晶体取向的新型氮化物基外延表面层。
