School of Physics and Electronics, Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, State Key Laboratory for Chemo/Biosensing and Chemometrics, Hunan University , Changsha 410082, People's Republic of China.
Nano Lett. 2016 May 11;16(5):3253-9. doi: 10.1021/acs.nanolett.6b00788. Epub 2016 Apr 18.
We report a unique lithographic process, termed "Sketch and Peel" lithography (SPL), for fast, clean, and reliable patterning of metallic structures from tens of nanometers to submillimeter scale using direct writing technology. The key idea of SPL process is to define structures using their presketched outlines as the templates for subsequent selective peeling of evaporated metallic layer. With reduced exposure area, SPL process enables significantly improved patterning efficiency up to hundreds of times higher and greatly mitigated proximity effect compared to current direct writing strategy. We demonstrate that multiscale hierarchical metallic structures with arbitrary shapes and minimal feature size of ∼15 nm could be defined with high fidelity using SPL process for potential nanoelectronic and nano-optical applications.
我们报告了一种独特的光刻工艺，称为“草图和剥离”光刻（SPL），该工艺使用直接书写技术，可快速、清洁、可靠地在从数十纳米到亚毫米级的范围内对金属结构进行图案化。SPL 工艺的关键思想是使用其预构图轮廓定义结构，作为后续选择性剥离蒸发金属层的模板。通过减小曝光面积，SPL 工艺能够显著提高图案化效率，最高可达数百倍，并且与当前的直接书写策略相比，大大减轻了邻近效应。我们证明，使用 SPL 工艺可以高精度定义具有任意形状和最小特征尺寸约为 15nm 的多尺度分级金属结构，可用于潜在的纳米电子学和纳米光学应用。
