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单层 MXenes:有前途的半金属和自旋能隙半导体。

Monolayer MXenes: promising half-metals and spin gapless semiconductors.

机构信息

School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China.

出版信息

Nanoscale. 2016 Apr 28;8(16):8986-94. doi: 10.1039/c6nr01333c. Epub 2016 Apr 13.

DOI:10.1039/c6nr01333c
PMID:27074402
Abstract

Half-metals and spin gapless semiconductors are promising candidates for spintronic applications due to the complete (100%) spin polarization of electrons around the Fermi level. Based on recent experimental and theoretical findings of graphene-like monolayer transition metal carbides and nitrides (also known as MXenes), we demonstrate using first-principles calculations that monolayers Ti2C and Ti2N exhibit nearly half-metallic ferromagnetism with the magnetic moments of 1.91 and 1.00μB per formula unit, respectively, while monolayer V2C is a metal with unstable antiferromagnetism, and monolayer V2N is a nonmagnetic metal. Interestingly, under a biaxial strain, there is a phase transition from a nearly half-metal to truly half-metal, spin gapless semiconductor, and metal for monolayer Ti2C. Monolayer Ti2N is still a nearly half-metal under a suitable biaxial strain. Large magnetic moments can be induced by the biaxial tensile and compressive strains for monolayer V2C and V2N, respectively. We also show that the structures of these four monolayer MXenes are stable according to the calculated formation energy and phonon spectrum. Our investigations suggest that, unlike monolayer graphene, monolayer MXenes Ti2C and Ti2N without vacancy, doping or external electric field exhibit intrinsic magnetism, especially the half-metallic ferromagnetism and spin gapless semiconductivity, which will stimulate further studies on possible spintronic applications for new two-dimensional materials of MXenes.

摘要

由于费米能级附近电子的完全(100%)自旋极化,半金属和能隙为零的半导体是自旋电子学应用的有前途的候选材料。基于最近对类似石墨烯的单层过渡金属碳化物和氮化物(也称为 MXenes)的实验和理论发现,我们使用第一性原理计算证明,单层 Ti2C 和 Ti2N 分别表现出近半金属铁磁性,其磁矩分别为 1.91 和 1.00μB/单位分子式,而单层 V2C 是一种具有不稳定反铁磁性的金属,而单层 V2N 是一种非磁性金属。有趣的是,在双轴应变下,单层 Ti2C 从近半金属转变为真正的半金属、能隙为零的半导体和金属。在适当的双轴应变下,单层 Ti2N 仍然是近半金属。单层 V2C 和 V2N 可以分别通过双轴拉伸和压缩应变诱导大磁矩。我们还表明,根据计算的形成能和声谱,这四个单层 MXenes 的结构是稳定的。我们的研究表明,与单层石墨烯不同,没有空位、掺杂或外加电场的单层 MXenes Ti2C 和 Ti2N 表现出固有磁性,特别是半金属铁磁性和能隙为零的半导体性,这将激发对 MXenes 等新型二维材料可能的自旋电子学应用的进一步研究。

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