Department of Mathematics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong.
Phys Rev E. 2016 Mar;93(3):033105. doi: 10.1103/PhysRevE.93.033105. Epub 2016 Mar 8.
The dynamic van der Waals theory [Phys. Rev. E 75, 036304 (2007)] is employed to model the growth of a single vapor bubble in a superheated liquid on a flat homogeneous substrate. The bubble spreading dynamics in the pool boiling regime has been numerically investigated for one-component van der Waals fluids close to the critical point, with a focus on the effect of the substrate wettability on bubble growth and contact line motion. The substrate wettability is found to control the apparent contact angle and the rate of bubble growth (the rate of total evaporation), through which the contact line speed is determined. An approximate expression is derived for the contact line speed, showing good agreement with the simulation results. This demonstrates that the contact line speed is primarily governed by (1) the circular shape of interface (for slow bubble growth), (2) the constant apparent contact angle, and (3) the constant bubble growth rate. It follows that the contact line speed has a sensitive dependence on the substrate wettability via the apparent contact angle which also determines the bubble growth rate. Compared to hydrophilic surfaces, hydrophobic surfaces give rise to a thinner shape of bubble and a higher rate of total evaporation, which combine to result in a much faster contact line speed. This can be linked to the earlier formation of a vapor film and hence the onset of boiling crisis.
采用动态范德华理论[Phys. Rev. E 75, 036304 (2007)]来模拟过热液体中单蒸气泡在平坦均相基底上的生长。对近临界点的单组分范德华流体在池沸腾区域中的气泡扩展动力学进行了数值研究,重点研究了基底润湿性对气泡生长和接触线运动的影响。发现基底润湿性通过控制表观接触角和气泡生长速率(总蒸发速率)来控制接触线速度。推导出接触线速度的近似表达式,与模拟结果吻合良好。这表明接触线速度主要由以下因素决定:(1)界面的圆形形状(对于缓慢的气泡生长);(2)恒定的表观接触角;(3)恒定的气泡生长速率。因此,接触线速度通过决定气泡生长速率的表观接触角对基底润湿性具有敏感的依赖性。与亲水表面相比,疏水表面会导致气泡形状更薄,总蒸发速率更高,这两者共同导致接触线速度更快。这可以归因于蒸气膜的更早形成,从而导致沸腾危机的发生。