V.M. Glushkov Institute of Cybernetics, National Academy of Sciences of Ukraine, Glushkova Ave., 40, Kyiv, 03680, Ukraine.
V.E. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, pr. Nauki, 41, Kyiv, 03028, Ukraine.
Nanoscale Res Lett. 2016 Dec;11(1):203. doi: 10.1186/s11671-016-1412-y. Epub 2016 Apr 16.
Our research was aimed at the study of aluminum films and porous anodic alumina (PAA) films in thin-film РАА/Al structures for optical sensors, based on metal-clad waveguides (MCWG). The results of the scanning electron microscopy (SEM) and atomic force microscopy (AFM) studies of the structure of Al films, deposited by DC magnetron sputtering, and of PAA films, formed on them, are presented in this work.The study showed that the structure of the Al films is defined by the deposition rate of aluminum and the thickness of the film. We saw that under anodization in 0.3 M aqueous oxalic acid solution at a voltage of 40 V, the PAA film with a disordered array of pores was formed on aluminum films 200-600 nm thick, which were deposited on glass substrates with an ultra-thin adhesive Nb layer. The research revealed the formation of two differently sized types of pores. The first type of pores is formed on the grain boundaries of aluminum film, and the pores are directed perpendicularly to the surface of aluminum. The second type of pores is formed directly on the grains of aluminum. They are directed perpendicularly to the grain plains. There is a clear tendency to self-ordering in this type of pores.
我们的研究旨在研究基于金属包层波导（MCWG）的光学传感器用薄膜 ΡΑΑ/Al 结构中的铝膜和多孔阳极氧化铝（PAA）膜。本文介绍了直流磁控溅射沉积的铝膜和在其上形成的 PAA 膜的结构的扫描电子显微镜（SEM）和原子力显微镜（AFM）研究结果。研究表明，铝膜的结构由铝的沉积速率和膜的厚度决定。我们发现，在 40 V 的电压下，在 0.3 M 水溶液草酸中进行阳极氧化时，在厚度为 200-600nm 的铝膜上形成了具有无序孔阵列的 PAA 膜，这些铝膜沉积在具有超薄 Nb 层的玻璃衬底上。研究揭示了两种不同尺寸类型的孔的形成。第一种类型的孔形成在铝膜的晶界上，并且孔垂直于铝的表面定向。第二种类型的孔直接在铝晶粒上形成。它们垂直于晶粒平原定向。在这种类型的孔中存在明显的自组织倾向。
