Department of Chemistry and ‡Department of Chemical Engineering and Materials Science, University of California , One Shields Avenue, Davis, California 95616, United States.
ACS Nano. 2016 May 24;10(5):5391-7. doi: 10.1021/acsnano.6b01604. Epub 2016 Apr 26.
Herein we report the electroless deposition of Ge onto sacrificial Ag nanoparticle (NP) templates to form hollow Ge NPs. The formation of AgI is a necessary component for this reaction. Through a systematic study of surface passivating ligands, we determined that tri-n-octylphosphine is necessary to facilitate the formation of hollow Ge NPs by acting as a transport agent for GeI2 and the oxidized Ag(+) cation (i.e., AgI product). Annular dark-field (ADF) scanning transmission electron microscopy (STEM) imaging of incomplete reactions revealed Ag/Ge core/shell NPs; in contrast, completed reactions displayed hollow Ge NPs with pinholes which is consistent with the known method for dissolution of the nanotemplate. Characterization of the hollow Ge NPs was performed by transmission electron microscopy, ADF-STEM, energy-dispersive X-ray spectroscopy, UV-vis spectrophotometry, and Raman spectroscopy. The galvanic replacement reaction of Ag with GeI2 offers a versatile method for controlling the structure of Ge nanomaterials.
本文报道了通过化学镀的方法在牺牲型 Ag 纳米颗粒(NP)模板上沉积 Ge 以形成空心 Ge NPs。AgI 的形成是该反应的必要组成部分。通过对表面钝化配体的系统研究,我们确定三正辛基膦(tri-n-octylphosphine)作为 GeI2 和氧化的 Ag+阳离子(即 AgI 产物)的传输剂,对于形成空心 Ge NPs 是必需的。不完全反应的环形暗场(annular dark-field,ADF)扫描透射电子显微镜(scanning transmission electron microscopy,STEM)成像显示出 Ag/Ge 核/壳 NPs;相比之下,完全反应则显示出具有针孔的空心 Ge NPs,这与已知的纳米模板溶解方法一致。通过透射电子显微镜、ADF-STEM、能量色散 X 射线能谱、紫外可见分光光度法和拉曼光谱对空心 Ge NPs 进行了表征。Ag 与 GeI2 的置换反应为控制 Ge 纳米材料的结构提供了一种通用方法。