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Pressure-Resistant Intermediate Valence in the Kondo Insulator SmB_{6}.

作者信息

Butch Nicholas P, Paglione Johnpierre, Chow Paul, Xiao Yuming, Marianetti Chris A, Booth Corwin H, Jeffries Jason R

机构信息

Center for Nanophysics and Advanced Materials, Department of Physics, University of Maryland, College Park, Maryland 20742, USA.

NIST Center for Neutron Research, National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, Maryland 20899, USA.

出版信息

Phys Rev Lett. 2016 Apr 15;116(15):156401. doi: 10.1103/PhysRevLett.116.156401. Epub 2016 Apr 13.

Abstract

Resonant x-ray emission spectroscopy was used to determine the pressure dependence of the f-electron occupancy in the Kondo insulator SmB_{6}. Applied pressure reduces the f occupancy, but surprisingly, the material maintains a significant divalent character up to a pressure of at least 35 GPa. Thus, the closure of the resistive activation energy gap and onset of magnetic order are not driven by stabilization of an integer valent state. Over the entire pressure range, the material maintains a remarkably stable intermediate valence that can in principle support a nontrivial band structure.

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