Department of Physics, University of California San Diego, La Jolla, CA 92093.
Center for High Pressure Science and Technology Advanced Research, Pudong, Shanghai 201203, People's Republic of China.
Proc Natl Acad Sci U S A. 2023 Feb 21;120(8):e2216367120. doi: 10.1073/pnas.2216367120. Epub 2023 Feb 15.
Recently, evidence for a conducting surface state (CSS) below 19 K was reported for the correlated -electron small gap semiconductor FeSi. In the work reported herein, the CSS and the bulk phase of FeSi were probed via electrical resistivity ρ measurements as a function of temperature , magnetic field to 60 T, and pressure to 7.6 GPa, and by means of a magnetic field-modulated microwave spectroscopy (MFMMS) technique. The properties of FeSi were also compared with those of the Kondo insulator SmB to address the question of whether FeSi is a -electron analogue of an -electron Kondo insulator and, in addition, a "topological Kondo insulator" (TKI). The overall behavior of the magnetoresistance of FeSi at temperatures above and below the onset temperature = 19 K of the CSS is similar to that of SmB. The two energy gaps, inferred from the ρ() data in the semiconducting regime, increase with pressure up to about 7 GPa, followed by a drop which coincides with a sharp suppression of . Several studies of ρ() under pressure on SmB reveal behavior similar to that of FeSi in which the two energy gaps vanish at a critical pressure near the pressure at which vanishes, although the energy gaps in SmB initially decrease with pressure, whereas in FeSi they increase with pressure. The MFMMS measurements showed a sharp feature at ≈ 19 K for FeSi, which could be due to ferromagnetic ordering of the CSS. However, no such feature was observed at ≈ 4.5 K for SmB.
最近,在关联电子小能隙半导体 FeSi 中报道了在 19 K 以下存在传导表面态 (CSS) 的证据。在本文报道的工作中,通过电阻 ρ 测量作为温度、磁场 到 60 T 和压力 到 7.6 GPa 的函数,以及通过磁场调制微波光谱 (MFMMS) 技术,研究了 CSS 和 FeSi 的体相。还将 FeSi 的性质与 Kondo 绝缘体 SmB 的性质进行了比较,以解决 FeSi 是否是 -电子 Kondo 绝缘体的 -电子类似物的问题,此外,还是一种“拓扑 Kondo 绝缘体”(TKI)。在 CSS 的起始温度 = 19 K 以上和以下温度下,FeSi 的磁阻整体行为类似于 SmB。从半导体区域的 ρ()数据推断出的两个能隙随着压力增加到约 7 GPa,随后下降,与 的急剧抑制相吻合。对 SmB 进行的几项 ρ()压力研究显示出与 FeSi 相似的行为,其中两个能隙在接近 消失的临界压力处消失,尽管 SmB 中的能隙最初随压力减小,而在 FeSi 中则随压力增加。MFMMS 测量显示 FeSi 在 ≈ 19 K 处存在一个尖锐特征,这可能是由于 CSS 的铁磁有序。然而,在 SmB 处 ≈ 4.5 K 时未观察到这种特征。