Qian Jingwen, Peng Zhijian, Shen Zhenguang, Zhao Zengying, Zhang Guoliang, Fu Xiuli
School of Engineering and Technology, China University of Geosciences, Beijing 100083, P. R. China.
State Key Laboratory of Information Photonics and Optical Communications, and School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, P. R. China.
Sci Rep. 2016 May 6;6:25574. doi: 10.1038/srep25574.
Resistivity-type humidity sensors have been investigated with great interest due to the increasing demands in industry, agriculture and daily life. To date, most of the available humidity sensors have been fabricated based on negative humidity impedance, in which the electrical resistance decreases as the humidity increases, and only several carbon composites have been reported to present positive humidity impedance. However, here we fabricate positive impedance humidity sensors only via single-component WO3-x crystals. The resistance of WO3-x crystal sensors in response to relative humidity could be tuned from a negative to positive one by increasing the compositional x. And it was revealed that the positive humidity impedance was driven by the defects of oxygen vacancy. This result will extend the application field of humidity sensors, because the positive humidity impedance sensors would be more energy-efficient, easier to be miniaturized and electrically safer than their negative counterparts for their lower operation voltages. And we believe that constructing vacancies in semiconducting materials is a universal way to fabricate positive impedance humidity sensors.
由于工业、农业和日常生活中的需求不断增加,电阻式湿度传感器受到了广泛关注。迄今为止,大多数现有的湿度传感器都是基于负湿度阻抗制造的,即电阻随湿度增加而降低,只有少数碳复合材料被报道呈现正湿度阻抗。然而,在这里我们仅通过单组分WO3-x晶体制造正阻抗湿度传感器。通过增加组成x,WO3-x晶体传感器对相对湿度的响应电阻可以从负调为正。并且发现正湿度阻抗是由氧空位缺陷驱动的。这一结果将扩展湿度传感器的应用领域,因为正湿度阻抗传感器比负湿度阻抗传感器具有更低的工作电压,因此更节能、更易于小型化且电气安全性更高。我们相信在半导体材料中构建空位是制造正阻抗湿度传感器的通用方法。