Light Technology Institute, Karlsruhe Institute of Technology , Engesserstrasse 13, 76131 Karlsruhe, Germany.
InnovationLab , Speyerer Strasse 4, 69115 Heidelberg, Germany.
ACS Appl Mater Interfaces. 2016 May 25;8(20):12959-67. doi: 10.1021/acsami.6b03557. Epub 2016 May 16.
In this work, we present organic light-emitting diodes (OLEDs) utilizing a novel amidoamine-functionalized polyfluorene (PFCON-C) as an electron injection layer (EIL). PFCON-C consists of a polyfluorene backbone to which multiple tertiary amine side chains are connected via an amide group. The influence of molecular characteristics on electronic performance and morphological properties was tested and compared to that of the widely used, literature known amino-functionalized polyfluorene (PFN) and polyethylenimine (PEI). PFCON-C reduces the turn-on voltage (VON) of poly(p-phenylene vinylene) (PPV)-based OLEDs from ∼5 to ∼3 V and increases the maximum power efficiency from <2 to >5 lm W(-1) compared to that of PFN. As a result of its semiconducting backbone, PFCON-C is significantly less sensitive to the processing parameters than PEI, and comparable power efficiencies are achieved for devices where thicknesses of PFCON-C are between 15 and 35 nm. Atomic force microscopy (AFM) measurements indicate that the presence of nonpolar side chains in the EIL material is important for its film-forming behavior, while Kelvin probe measurements suggest that the amount of amine groups in the side chains influences the work-function shift induced by the EIL material. These results are used to suggest strategies for the design of polymeric electron injection layers.
在这项工作中,我们展示了利用新型酰胺基官能化聚芴(PFCON-C)作为电子注入层(EIL)的有机发光二极管(OLED)。PFCON-C 由聚芴主链组成,通过酰胺基团连接多个叔胺侧链。测试并比较了分子特性对电子性能和形态性质的影响,与广泛使用的文献中已知的氨基官能化聚芴(PFN)和聚乙烯亚胺(PEI)进行了比较。与 PFN 相比,PFCON-C 将基于聚(对苯撑乙烯)(PPV)的 OLED 的开启电压(VON)从约 5V 降低到约 3V,并将最大功率效率从<2lmW-1增加到>5lmW-1。由于其半导体主链,PFCON-C 对处理参数的敏感性明显低于 PEI,并且在 PFCON-C 厚度在 15nm 至 35nm 之间的器件中可以实现可比的功率效率。原子力显微镜(AFM)测量表明,EIL 材料中非极性侧链的存在对其成膜行为很重要,而 Kelvin 探针测量表明,侧链中胺基团的数量会影响 EIL 材料引起的功函数偏移。这些结果被用来提出设计聚合物电子注入层的策略。