Publisher's Note: "High sensitivity measurement system for the direct-current, capacitance-voltage, and gate-drain low frequency noise characterization of field effect transistors" [Rev. Sci. Instrum. 87, 044702 (2016)].

Giusi G, Giordano O, Scandurra G, Rapisarda M, Calvi S, Ciofi C

University of Messina, I-98166 Messina, Italy.

IMM-CNR, I-00133 Rome, Italy.

Rev Sci Instrum. 2016 May;87(5):059902. doi: 10.1063/1.4950949.

Abstract

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