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基于动态核极化效应的用于磁法勘探的奥弗豪泽地磁传感器。

Overhauser Geomagnetic Sensor Based on the Dynamic Nuclear Polarization Effect for Magnetic Prospecting.

作者信息

Ge Jian, Dong Haobin, Liu Huan, Yuan Zhiwen, Dong He, Zhao Zhizhuo, Liu Yonghua, Zhu Jun, Zhang Haiyang

机构信息

School of Automation, China University of Geosciences, Wuhan 430074, China.

Science and Technology on Near-Surface Detection Laboratory, Wuxi 214035, China.

出版信息

Sensors (Basel). 2016 Jun 1;16(6):806. doi: 10.3390/s16060806.

DOI:10.3390/s16060806
PMID:27258283
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC4934232/
Abstract

Based on the dynamic nuclear polarization (DNP) effect, an alternative design of an Overhauser geomagnetic sensor is presented that enhances the proton polarization and increases the amplitude of the free induction decay (FID) signal. The short-pulse method is adopted to rotate the enhanced proton magnetization into the plane of precession to create an FID signal. To reduce the negative effect of the powerful electromagnetic interference, the design of the anti-interference of the pick-up coil is studied. Furthermore, the radio frequency polarization method based on the capacitive-loaded coaxial cavity is proposed to improve the quality factor of the resonant circuit. In addition, a special test instrument is designed that enables the simultaneous testing of the classical proton precession and the Overhauser sensor. Overall, comparison experiments with and without the free radical of the Overhauser sensors show that the DNP effect does effectively improve the amplitude and quality of the FID signal, and the magnetic sensitivity, resolution and range reach to 10 pT/Hz 1 / 2 @1 Hz, 0.0023 nT and 20-100 μ T, respectively.

摘要

基于动态核极化（DNP）效应，提出了一种Overhauser地磁传感器的替代设计，该设计增强了质子极化并增加了自由感应衰减（FID）信号的幅度。采用短脉冲方法将增强的质子磁化旋转到进动平面以产生FID信号。为了降低强电磁干扰的负面影响，研究了拾取线圈的抗干扰设计。此外，提出了基于电容加载同轴腔的射频极化方法以提高谐振电路的品质因数。另外，设计了一种特殊的测试仪器，能够同时测试经典质子进动和Overhauser传感器。总体而言，对有和没有Overhauser传感器自由基的对比实验表明，DNP效应确实有效地提高了FID信号的幅度和质量，并且磁灵敏度、分辨率和范围分别达到10 pT/Hz 1 / 2 @1 Hz、0.0023 nT和20 - 100 μT。

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