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具有可调折射率、阿贝数和记忆性能的高透明、柔性生物基聚酰亚胺/TiO2 和 ZrO2 杂化薄膜。

Highly transparent and flexible bio-based polyimide/TiO2 and ZrO2 hybrid films with tunable refractive index, Abbe number, and memory properties.

机构信息

Institute of Polymer Science and Engineering, National Taiwan University, Taipei, Taiwan 10617.

出版信息

Nanoscale. 2016 Jul 7;8(25):12793-802. doi: 10.1039/c6nr03963d. Epub 2016 Jun 14.

Abstract

The novel bio-based polyimide (4ATA-PI) and the corresponding PI hybrids of TiO2 or ZrO2 with excellent optical properties and thermal stability have been prepared successfully. The highly transparent 4ATA-PI containing carboxylic acid groups in the backbone could provide reaction sites for organic-inorganic bonding to obtain homogeneous hybrid films. These PI hybrid films showed a tunable refractive index (1.60-1.81 for 4ATA-PI/TiO2 and 1.60-1.80 for 4ATA-PI/ZrO2), and the 4ATA-PI/ZrO2 hybrid films revealed a higher optical transparency and Abbe's number than those of the 4ATA-PI/TiO2 system due to a larger band gap of ZrO2. By introducing TiO2 and ZrO2 as the electron acceptor into the 4ATA-PI system, the hybrid materials have a lower LUMO energy level which could facilitate and stabilize the charge transfer complex. Therefore, memory devices derived from these PI hybrid films exhibited tunable memory properties from DRAM, SRAM, to WORM with a different TiO2 or ZrO2 content from 0 wt% to 50 wt% with a high ON/OFF ratio (10(8)). In addition, the different energy levels of TiO2 and ZrO2 revealed specifically unique memory characteristics, implying the potential application of the prepared 4ATA-PI/TiO2 and 4ATA-PI/ZrO2 hybrid films in highly transparent memory devices.

摘要

已成功制备出具有优异光学性能和热稳定性的新型生物基聚酰亚胺(4ATA-PI)及其相应的 TiO2 或 ZrO2 聚酰亚胺杂化材料。具有支链羧酸基团的高透明 4ATA-PI 可为有机-无机键合提供反应位点,从而获得均匀的杂化膜。这些 PI 杂化膜表现出可调折射率(4ATA-PI/TiO2 为 1.60-1.81,4ATA-PI/ZrO2 为 1.60-1.80),并且 4ATA-PI/ZrO2 杂化膜由于 ZrO2 的带隙较大,具有更高的光学透明度和阿贝数。通过将 TiO2 和 ZrO2 作为电子受体引入 4ATA-PI 体系,杂化材料具有较低的 LUMO 能级,这有助于并稳定电荷转移复合物。因此,源自这些 PI 杂化膜的存储器件表现出从 DRAM 到 WORM 的可调谐存储特性,其具有不同的 TiO2 或 ZrO2 含量(0 wt%至 50 wt%)和高 ON/OFF 比(108)。此外,TiO2 和 ZrO2 的不同能级显示出特定的独特的存储特性,这意味着所制备的 4ATA-PI/TiO2 和 4ATA-PI/ZrO2 杂化膜在高透明存储器件中有潜在的应用。

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