Functional Polymeric Materials Laboratory, Institute of Polymer Science and Engineering, National Taiwan University, 1 Roosevelt Road, 4th Sec., Taipei, 10617, Taiwan.
Sci Rep. 2017 Aug 11;7(1):7978. doi: 10.1038/s41598-017-08544-3.
A series of novel polyimidothioethers (PITEs) and the respective polymer hybrids of titania or zirconia with fantastic thermal stability and optical properties have been successfully prepared. These colorless PITEs with high transparency were synthesized by Michael polyaddition from commercially available dithiol and bismaleimides monomers. The PITE with sulfide and hydroxyl groups (S-OH) and the corresponding hybrid films declare ultra-lowest birefringence value of 0.002 and tunable refractive index (1.65-1.81 for S-OH/titania and 1.65-1.80 for S-OH/zirconia), implying large potential to the optical applications in the future. Moreover, the S-OH/zirconia hybrid films exhibit higher Abbe's number and optical transparency than those of S-OH/titania system because larger energy band gap of ZrO. Furthermore, by adding titania and zirconia as electron acceptor into S-OH system, the charge transfer complex can be facilitated and stabilized caused by the lower LUMO energy level of hybrid materials. Consequently, the devices of memory prepared from these polymer films of hybrid showed interesting and adjustable memory behavior from DRAM, SRAM, to WORM at various titania or zirconia contents with a large ON/OFF ratio (10), denoting that the memory devices derived from these highly transparent novel S-OH/TiO and S-OH/ZrO hybrid films are attractive for the electrical applications.
一系列新型聚酰亚胺硫醚(PITE)及其相应的氧化钛或氧化锆聚合物杂化物已成功制备,具有出色的热稳定性和光学性能。这些无色 PITE 具有高透明度,是通过迈克尔加成反应从商业可得的二硫醇和双马来酰亚胺单体合成的。具有硫醚和羟基(S-OH)的 PITE 和相应的杂化薄膜具有超低的双折射值 0.002 和可调折射率(S-OH/氧化钛为 1.65-1.81,S-OH/氧化锆为 1.65-1.80),这意味着它们在未来的光学应用中有很大的潜力。此外,S-OH/氧化锆杂化薄膜的阿贝数和光学透明度高于 S-OH/氧化钛体系,因为氧化锆的能带隙更大。此外,通过将氧化钛和氧化锆作为电子受体添加到 S-OH 体系中,由于杂化材料的较低 LUMO 能级,电荷转移复合物可以得到促进和稳定。因此,这些聚合物薄膜的混合体在不同氧化钛或氧化锆含量下的器件表现出有趣和可调节的记忆行为,从 DRAM、SRAM 到 WORM,具有大的 ON/OFF 比(10),这表明,源自这些高透明新型 S-OH/TiO 和 S-OH/ZrO 杂化薄膜的记忆器件具有吸引人的电学应用前景。