Zhu Sheng-Cai, Guan Shu-Hui, Liu Zhi-Pan
Collaborative Innovation Center of Chemistry for Energy Material, Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, Key Laboratory of Computational Physical Science (Ministry of Education), Department of Chemistry, Fudan University, Shanghai 200433, China.
Phys Chem Chem Phys. 2016 Jul 21;18(27):18563-74. doi: 10.1039/c6cp03673b. Epub 2016 Jun 27.
Solid-to-solid phase transition, although widely exploited in making new materials, challenges persistently our current theory for predicting its complex kinetics and rich microstructures in transition. The Ga2O3α-β phase transformation represents such a common but complex reaction with marked change in cation coordination and crystal density, which was known to yield either amorphous or crystalline products under different synthetic conditions. Here we, via recently developed stochastic surface walking (SSW) method, resolve for the first time the atomistic mechanism of Ga2O3α-β phase transformation, the pathway of which turns out to be the first reaction pathway ever determined for a new type of diffusionless solid phase transition, namely, pseudomartensitic phase transition. We demonstrate that the sensitivity of product crystallinity is caused by its multi-step, multi-type reaction pathway, which bypasses seven intermediate phases and involves all types of elementary solid phase transition steps, i.e. the shearing of O layers (martensitic type), the local diffusion of Ga atoms (reconstructive type) and the significant lattice dilation (dilation type). While the migration of Ga atoms across the close-packed O layers is the rate-determining step and yields "amorphous-like" high energy intermediates, the shearing of O layers contributes to the formation of coherent biphase junctions and the presence of a crystallographic orientation relation, (001)α//(201[combining macron])β + [120]α//[13[combining macron]2]β. Our experiment using high-resolution transmission electron microscopy further confirms the theoretical predictions on the atomic structure of biphase junction and the formation of (201[combining macron])β twin, and also discovers the late occurrence of lattice expansion in the nascent β phase that grows out from the parent α phase. By distinguishing pseudomartensitic transition from other types of mechanisms, we propose general rules to predict the product crystallinity of solid phase transition. The new knowledge on the kinetics of pseudomartensitic transition complements the theory of diffusionless solid phase transition.
固-固相变尽管在新型材料制备中得到了广泛应用,但在预测其复杂动力学和转变过程中丰富的微观结构方面,始终对我们现有的理论构成挑战。Ga2O3的α-β相变就是这样一个常见但复杂的反应,其阳离子配位和晶体密度发生显著变化,已知在不同合成条件下会产生非晶态或晶态产物。在此,我们通过最近开发的随机表面行走(SSW)方法,首次解析了Ga2O3α-β相变的原子机制,其转变路径是首次确定的一种新型无扩散固相转变(即伪马氏体相变)的反应路径。我们证明,产物结晶度的敏感性是由其多步、多类型的反应路径引起的,该路径绕过了七个中间相,涉及所有类型的基本固相转变步骤,即O层的剪切(马氏体类型)、Ga原子的局部扩散(重构类型)和显著的晶格膨胀(膨胀类型)。虽然Ga原子在紧密堆积的O层间迁移是速率决定步骤,并产生“类非晶态”的高能中间体,但O层的剪切有助于形成相干双相结以及存在晶体学取向关系(001)α//(201[上划线])β + [120]α//[13[上划线]2]β。我们使用高分辨率透射电子显微镜进行的实验进一步证实了关于双相结原子结构和(201[上划线])β孪晶形成 的理论预测,并且还发现了从母相α相生长出的新生β相后期发生晶格膨胀的现象。通过区分伪马氏体转变与其他类型的机制,我们提出了预测固相转变产物结晶度的一般规则。关于伪马氏体转变动力学的新知识补充了无扩散固相转变理论。