Sun Yiling, Gao Pingqi, He Jian, Zhou Suqiong, Ying Zhiqin, Yang Xi, Xiang Yong, Ye Jichun
School of Energy Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, People's Republic of China.
Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, People's Republic of China.
Nanoscale Res Lett. 2016 Dec;11(1):310. doi: 10.1186/s11671-016-1505-7. Epub 2016 Jun 28.
Silicon/organic hybrid solar cells have recently attracted great attention because they combine the advantages of silicon (Si) and the organic cells. In this study, we added a patterned passivation layer of silicon nitride (SiNx:H) onto the rear surface of the Si substrate in a Si/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (
PSS) hybrid solar cell, enabling an improvement of 0.6 % in the power conversion efficiency (PCE). The addition of the SiNx:H layer boosted the open circuit voltage (V oc) from 0.523 to 0.557 V, suggesting the well-passivation property of the patterned SiNx:H thin layer that was created by plasma-enhanced chemical vapor deposition and lithography processes. The passivation properties that stemmed from front
PSS, rear-SiNx:H, front
PSS/rear-SiNx:H, etc. are thoroughly investigated, in consideration of the process-related variations.
硅/有机混合太阳能电池最近备受关注，因为它们结合了硅（Si）和有机电池的优点。在本研究中，我们在硅/聚（3,4-亚乙基二氧噻吩）：聚（苯乙烯磺酸盐）（PEDOT：PSS）混合太阳能电池的硅衬底背面添加了图案化的氮化硅（SiNx:H）钝化层，使功率转换效率（PCE）提高了0.6%。SiNx:H层的添加将开路电压（Voc）从0.523 V提高到0.557 V，这表明通过等离子体增强化学气相沉积和光刻工艺制备的图案化SiNx:H薄层具有良好的钝化性能。考虑到与工艺相关的变化，对由正面PEDOT：PSS、背面SiNx:H、正面PEDOT：PSS/背面SiNx:H等产生的钝化性能进行了深入研究。
