Lan R, Loiko P, Mateos X, Wang Y, Li J, Pan Y, Choi S Y, Kim M H, Rotermund F, Yasukevich A, Yumashev K, Griebner U, Petrov V
Appl Opt. 2016 Jun 20;55(18):4877-87. doi: 10.1364/AO.55.004877.
A Ho:YAG ceramic microchip laser pumped by a Tm fiber laser at 1910 nm is passively Q-switched by single- and multi-layer graphene, single-walled carbon nanotubes (SWCNTs), and Cr:ZnSe saturable absorbers (SAs). Employing SWCNTs, this laser generated an average power of 810 mW at 2090 nm with a slope efficiency of 68% and continuous wave to Q-switching conversion efficiency of 70%. The shortest pulse duration was 85 ns at a repetition rate of 165 kHz, and the pulse energy reached 4.9 μJ. The laser performance and pulse stability were superior compared to graphene SAs even for a different number of graphene layers (n=1 to 4). A model for the description of the Ho:YAG laser Q-switched by carbon nanostructures is presented. This modeling allowed us to estimate the saturation intensity for multi-layered graphene and SWCNT SAs to be 1.2±0.2 and 7±1 MW/cm, respectively. When using Cr:ZnSe, the Ho:YAG microchip laser generated 11 ns/25 μJ pulses at a repetition rate of 14.8 kHz.
由1910 nm的Tm光纤激光器泵浦的Ho:YAG陶瓷微芯片激光器通过单层和多层石墨烯、单壁碳纳米管（SWCNT）和Cr:ZnSe饱和吸收体（SA）进行被动调Q。采用SWCNT时，该激光器在2090 nm处产生的平均功率为810 mW，斜率效率为68%，连续波到调Q的转换效率为70%。最短脉冲持续时间在重复频率为165 kHz时为85 ns，脉冲能量达到4.9 μJ。即使对于不同层数（n = 1至4）的石墨烯SA，该激光器的性能和脉冲稳定性也更优。提出了一个用于描述由碳纳米结构调Q的Ho:YAG激光器的模型。该建模使我们能够估计多层石墨烯和SWCNT SA的饱和强度分别为1.2±0.2和7±1 MW/cm²。使用Cr:ZnSe时，Ho:YAG微芯片激光器在重复频率为14.8 kHz时产生11 ns/25 μJ的脉冲。
