Dipartimento di Ingegneria Industriale, Università di Salerno, I-84084 Fisciano, Salerno, Italy.
Dipartimento di Fisica "E.R. Caianiello", Università di Salerno, I-84084 Fisciano, Salerno, Italy.
Sci Rep. 2016 Jul 14;6:29685. doi: 10.1038/srep29685.
A theoretical model, combining trapping/detrapping and recombination mechanisms, is formulated to explain the origin of random current fluctuations in silicon-based solar cells. In this framework, the comparison between dark and photo-induced noise allows the determination of important electronic parameters of the defect states. A detailed analysis of the electric noise, at different temperatures and for different illumination levels, is reported for crystalline silicon-based solar cells, in the pristine form and after artificial degradation with high energy protons. The evolution of the dominating defect properties is studied through noise spectroscopy.
一个理论模型,结合了俘获/解俘获和复合机制,被构建来解释硅基太阳能电池中随机电流波动的起源。在这个框架中,暗电流噪声和光致噪声的对比允许确定缺陷态的重要电子参数。对不同温度和不同光照水平下的电噪声进行了详细分析,针对的是原始形式和经过高能质子人工退化的晶体硅基太阳能电池。通过噪声光谱学研究了主导缺陷性质的演变。