Wihuri Physical Laboratory, Department of Physics and Astronomy, University of Turku , Turku FI-20014, Finland.
IFW Dresden , P.O. Box 27 01 16, D-01171 Dresden, Germany.
ACS Appl Mater Interfaces. 2016 Aug 10;8(31):20440-7. doi: 10.1021/acsami.6b04132. Epub 2016 Aug 1.
To actualize the high spintronic application potential of complex magnetic oxides, it is essential to fabricate these materials as thin films with the best possible magnetic and electrical properties. Sr2FeMoO6 is an outstanding candidate for such applications, but presently no thin film synthesis route, which would preserve the magnetic properties of bulk Sr2FeMoO6, is currently known. In order to address this problem, we present a comprehensive experimental and theoretical study where we link the magnetic and half metallic properties of Sr2FeMoO6 thin films to lattice strain, Fe-Mo antisite disorder and oxygen vacancies. We find the intrinsic effect of strain on the magnetic properties to be very small, but also that an increased strain will significantly stabilize the Sr2FeMoO6 lattice against the formation of antisite disorder and oxygen vacancies. These defects, on the other hand, are recognized to drastically influence the magnetism of Sr2FeMoO6 in a nonlinear manner. On the basis of the findings, we propose strain manipulation and reductive annealing as optimization pathways for improving the spintronic functionality of Sr2FeMoO6.
为了实现复杂磁性氧化物在高自旋电子学中的应用潜力，将这些材料制备成具有最佳磁电性能的薄膜至关重要。Sr2FeMoO6 就是此类应用的一个杰出候选材料，但目前尚无已知的薄膜合成途径可以保留块状 Sr2FeMoO6 的磁性。为了解决这个问题，我们进行了全面的实验和理论研究，将 Sr2FeMoO6 薄膜的磁性和半金属性质与晶格应变、Fe-Mo 反位缺陷和氧空位联系起来。我们发现应变对磁性的固有影响非常小，但增加应变会显著稳定 Sr2FeMoO6 晶格，防止反位缺陷和氧空位的形成。另一方面，这些缺陷被认为会以非线性方式极大地影响 Sr2FeMoO6 的磁性。基于这些发现，我们提出应变控制和还原退火作为优化 Sr2FeMoO6 自旋电子学功能的途径。
