IV. Physikalisches Institut, Georg-August Universität Göttingen, D-37077 Göttingen, Germany.
Nanotechnology. 2016 Sep 2;27(35):355703. doi: 10.1088/0957-4484/27/35/355703. Epub 2016 Jul 25.
In this work, GaN/InGaN/GaN nanocolumns (NCs) have been grown by molecular beam epitaxy. Selective area growth (SAG) and self-organized growth (SOG) were performed simultaneously in patterned and unpatterned regions of the same substrate, respectively. The resulting structures show different tip morphologies and structural properties due to the different polarity along the growth direction, namely Ga-polar with r-plane faceted tips for the SAG NCs and N-polar with c-plane top facet for the SOG ones. When growing Ga-polar GaN/InGaN NCs, no indium is incorporated at a substrate temperature of [Formula: see text]°C. Rather, indium incorporation takes place under the same growth conditions on the N-polar NCs. The In-incorporation is investigated by means of nano x-ray fluorescence and diffraction, high-angle annular dark-field scanning transmission electron microscopy and high-resolution transmission electron microscopy.
在这项工作中，通过分子束外延生长了 GaN/InGaN/GaN 纳米柱（NCs）。在同一衬底的图案化和非图案化区域中分别进行了选择性区域生长（SAG）和自组织生长（SOG）。由于沿生长方向的不同极性，所得结构显示出不同的尖端形态和结构性质，即 SAG NCs 为 Ga 极性，具有 r 面成核尖端，而 SOG NCs 为 N 极性，具有 c 面顶平面。在生长 Ga 极性 GaN/InGaN NCs 时，在 [Formula: see text]°C 的衬底温度下不掺入铟。相反，在相同的生长条件下，N 极性 NCs 上会发生铟掺入。通过纳米 X 射线荧光和衍射、高角度环形暗场扫描透射电子显微镜和高分辨率透射电子显微镜研究了 In 的掺入。
