Tyagi Nidhi, Sinha Nidhi, Yadav Harsh, Kumar Binay
Crystal Laboratory, Department of Physics and Astrophysics, University of Delhi, Delhi 110007, India.
Department of Electronics, SGTB Khalsa College, University of Delhi, Delhi 110007, India.
Acta Crystallogr B Struct Sci Cryst Eng Mater. 2016 Aug 1;72(Pt 4):593-601. doi: 10.1107/S2052520616007629.
L-Histidinium dihydrogen arsenate orthoarsenic acid (LHAS) crystals were grown by the slow evaporation method. Single-crystal X-ray diffraction confirms monoclinic structure. The growth rates of various planes of LHAS crystals were estimated by morphological study. Hirshfeld surface and fingerprint plots were analyzed to investigate the intermolecular interactions at 0.002 a.u. present in the crystal structure. The functional groups and phase behavior of the compound are studied by FTIR spectroscopy and differential scanning calorimetry (DSC). A ferroelectric to paraelectric phase transition at 307 K was observed in dielectric studies. The piezoelectric charge coefficients of the grown crystal were found to be 2 pC/N. The values of coercive field (Ec), remnant polarization (Pr) and spontaneous polarization (Ps) in the hysteresis loop are found to be 5.236 kV cm(-1), 0.654 µC cm(-2) and 2.841 µC cm(-2), respectively. Piezoelectricity and ferroelectricity are reported for the first time in LHAS crystals. The mechanical strength was confirmed from microhardness study and void volume. Due to the low value of the dielectric constant, and good piezoelectric and ferroelectric properties, LHAS crystals can be used in microelectronics, sensors and advanced electronic devices.
通过缓慢蒸发法生长了砷酸二氢L-组氨酸原砷酸（LHAS）晶体。单晶X射线衍射证实其为单斜结构。通过形态学研究估算了LHAS晶体各晶面的生长速率。分析了Hirshfeld表面和指纹图谱，以研究晶体结构中存在的0.002 a.u.的分子间相互作用。通过傅里叶变换红外光谱（FTIR）和差示扫描量热法（DSC）研究了该化合物的官能团和相行为。在介电研究中观察到在307 K时发生铁电至顺电的相变。发现生长晶体的压电电荷系数为2 pC/N。磁滞回线中的矫顽场（Ec）、剩余极化（Pr）和自发极化（Ps）值分别为5.236 kV cm⁻¹、0.654 μC cm⁻²和2.841 μC cm⁻²。首次报道了LHAS晶体中的压电性和铁电性。通过显微硬度研究和空隙体积证实了其机械强度。由于介电常数较低，且具有良好的压电和铁电性能，LHAS晶体可用于微电子、传感器和先进电子设备。
