Faculty of Science and Engineering, Manchester Metropolitan University, Chester Street, Manchester M1 5GD, UK.
Nanoscale. 2016 Aug 18;8(33):15241-51. doi: 10.1039/c6nr04220a.
Molybdenum (di)oxide (MoO2) nanowires are fabricated onto graphene-like and graphite screen-printed electrodes (SPEs) for the first time, revealing crucial insights into the electrochemical properties of carbon/graphitic based materials. Distinctive patterns observed in the electrochemical process of nanowire decoration show that electron transfer occurs predominantly on edge plane sites when utilising SPEs fabricated/comprised of graphitic materials. Nanowire fabrication along the edge plane sites (and on edge plane like-sites/defects) of graphene/graphite is confirmed with Cyclic Voltammetry, Scanning Electron Microscopy (SEM) and Raman Spectroscopy. Comparison of the heterogeneous electron transfer (HET) rate constants (k°) at unmodified and nanowire coated SPEs show a reduction in the electrochemical reactivity of SPEs when the edge plane sites are effectively blocked/coated with MoO2. Throughout the process, the basal plane sites of the graphene/graphite electrodes remain relatively uncovered; except when the available edge plane sites have been utilised, in which case MoO2 deposition grows from the edge sites covering the entire surface of the electrode. This work clearly illustrates the distinct electron transfer properties of edge and basal plane sites on graphitic materials, indicating favourable electrochemical reactivity at the edge planes in contrast to limited reactivity at the basal plane sites. In addition to providing fundamental insights into the electron transfer properties of graphite and graphene-like SPEs, the reported simple, scalable, and cost effective formation of unique and intriguing MoO2 nanowires realised herein is of significant interest for use in both academic and commercial applications.
二钼化钼(MoO2)纳米线首次被制造到类石墨烯和石墨丝网印刷电极(SPE)上,这为研究碳/石墨基材料的电化学性质提供了重要的见解。在纳米线修饰的电化学过程中观察到的独特图案表明,当使用由石墨材料制造/组成的 SPE 时,电子转移主要发生在边缘平面位置上。通过循环伏安法、扫描电子显微镜(SEM)和拉曼光谱证实了纳米线在石墨烯/石墨的边缘平面位置(和边缘平面类似位置/缺陷)上的制造。比较未修饰和纳米线涂覆 SPE 的非均相电子转移(HET)速率常数(k°)表明,当边缘平面位置被 MoO2 有效阻挡/涂覆时,SPE 的电化学反应性降低。在整个过程中,石墨烯/石墨电极的基面位置相对未被覆盖;除非已利用可用的边缘平面位置,在这种情况下,MoO2 沉积从边缘位置生长,覆盖电极的整个表面。这项工作清楚地说明了石墨材料中边缘和基面位置的电子转移特性的明显差异,表明边缘平面具有有利的电化学反应性,而基面位置的反应性有限。除了为石墨和类石墨烯 SPE 的电子转移性质提供基本的见解外,本文还报道了独特而有趣的 MoO2 纳米线的简单、可扩展且具有成本效益的形成,这对于学术和商业应用都具有重要意义。