Cho Inseong, Gong Seokhyeon, Song Danoh, Lee Young-Gi, Ryou Myung-Hyun, Lee Yong Min
Department of Chemical and Biological Engineering, Hanbat National University, 125 Dongseodaero, Yuseong-gu, Daejeon 34158, Republic of Korea.
Nano Convergence Devices Research Department, Power Control Device Research Section, Electronics and Telecommunications Research Institute (ETRI), 218 Gajeongno, Yuseong-gu, Daejeon 34129, Republic of Korea.
Sci Rep. 2016 Aug 17;6:30945. doi: 10.1038/srep30945.
A new Cu current collector was prepared by introducing a mussel-inspired polydopamine coating onto a Cu foil surface to improve the electrochemical performance of a Si electrode. The polydopamine coating covalently bonded the polymeric binder (with hydroxyl functional groups) via a condensation reaction. The coating improved the adhesion strength between the Si composite electrode and the Cu current collector (245.5 N m(-1), 297.5 N m(-1), and 353.2 N m(-1) for the Si electrodes based on bare Cu, polydopamine-treated Cu without thermal treatment, and polydopamine-treated Cu with thermal treatment, respectively). We demonstrate that the detachment between the Si composite electrode and the current collector plays an important role in determining the electrochemical performance of the Si electrode. The cycle life and rate capability of the Si electrode improved when the polydopamine surface-treated Cu current collector was used (963.9 mAh g(-1), 1361.1 mAh g(-1), and 1590.0 mAh g(-1) for the Si electrodes based on bare Cu, polydopamine-treated Cu without thermal treatment, and polydopamine-treated Cu with thermal treatment, respectively, at C/2 after 500 cycles).
通过在铜箔表面引入受贻贝启发的聚多巴胺涂层来制备一种新型铜集流体,以改善硅电极的电化学性能。聚多巴胺涂层通过缩合反应与带有羟基官能团的聚合物粘结剂共价结合。该涂层提高了硅复合电极与铜集流体之间的粘附强度(基于裸铜的硅电极、未经热处理的聚多巴胺处理铜的硅电极和经热处理的聚多巴胺处理铜的硅电极的粘附强度分别为245.5 N m(-1)、297.5 N m(-1)和353.2 N m(-1))。我们证明,硅复合电极与集流体之间的分离在决定硅电极的电化学性能方面起着重要作用。当使用聚多巴胺表面处理的铜集流体时,硅电极的循环寿命和倍率性能得到改善(基于裸铜的硅电极、未经热处理的聚多巴胺处理铜的硅电极和经热处理的聚多巴胺处理铜的硅电极在500次循环后C/2下的比容量分别为963.9 mAh g(-1)、1361.1 mAh g(-1)和1590.0 mAh g(-1))。