Electrical Engineering and Computer Sciences, University of California , Berkeley, California 94720, United States.
Materials Sciences Division, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.
ACS Appl Mater Interfaces. 2016 Sep 14;8(36):24205-11. doi: 10.1021/acsami.6b07822. Epub 2016 Aug 31.
The reduction of parasitic recombination processes commonly occurring within the silicon crystal and at its surfaces is of primary importance in crystalline silicon devices, particularly in photovoltaics. Here we explore a simple, room temperature treatment, involving a nonaqueous solution of the superacid bis(trifluoromethane)sulfonimide, to temporarily deactivate recombination centers at the surface. We show that this treatment leads to a significant enhancement in optoelectronic properties of the silicon wafer, attaining a level of surface passivation in line with state-of-the-art dielectric passivation films. Finally, we demonstrate its advantage as a bulk lifetime and process cleanliness monitor, establishing its compatibility with large area photoluminescence imaging in the process.
在晶体硅器件中，特别是在光伏领域，减少硅晶体内部和表面普遍存在的寄生复合过程至关重要。在这里，我们探索了一种简单的室温处理方法，即在非水体系中使用超强酸双（三氟甲烷）磺酰亚胺，暂时使表面的复合中心失活。我们发现，这种处理方法显著提高了硅片的光电性能，使其表面钝化程度达到了与先进介电钝化膜相当的水平。最后，我们还证明了它作为体寿命和工艺清洁度监测器的优势，表明其与大面积光致发光成像技术在工艺上具有兼容性。
