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双介观环中的与门响应

AND Gate Response in a Double Mesoscopic Ring.

作者信息

Al-Badry Lafy Faraj, Al-Saidi Shakir Abdul-Hussein, Ajeel Fouad Nimr

机构信息

Department of Physics, Faculty of Science, Thi Qar University, Nassiriya, Iraq.

出版信息

Recent Pat Nanotechnol. 2017;11(1):63-69. doi: 10.2174/1872210510666160530125904.

DOI:10.2174/1872210510666160530125904
PMID:27557675
Abstract

BACKGROUND

Normal metal mesoscopic rings are being used in designing quantum logical gates due to the quantum interference effect and quantum confinement. This study focused on examining electronic transport through normal metal mesoscopic rings that have one dimension, and suggested how such rings can be employed to design nanoscale AND gate. A double mesoscopic ring was utilized for AND gate operation, every ring was threaded by magnetic flux, and the magnetic flux was considered as the key tuning parameter in the AND gate action. For a particular value of magnetic flux equal to the half of elementary flux-quantum, a logical AND gate operation was used depending on the applied gate voltages. Two gate voltages were externally applied to the lower arm of every ring, which acted as the two inputs of the AND gate. Few relevant patents to the designing and fabrication of quantum logical gates have been reviewed and cited.

METHODS

All the calculations are based on the time-dependent Hamiltonian model, the steady state is used to obtain the transmission probability.

RESULTS

The transmission probability, the current and the noise power of current fluctuations were calculated in the weak-coupling and strong-coupling regimes.

CONCLUSION

This study paved the way for the production of an electronic logic gate.

摘要

背景

由于量子干涉效应和量子限制,正常金属介观环正被用于设计量子逻辑门。本研究着重考察通过一维正常金属介观环的电子输运,并提出如何利用此类环来设计纳米级与门。一个双介观环被用于与门操作,每个环都有磁通量穿过,且磁通量被视为与门作用中的关键调谐参数。对于等于基本磁通量子一半的特定磁通量值,根据所施加的栅极电压进行逻辑与门操作。两个栅极电压被外部施加到每个环的下臂,该下臂作为与门的两个输入。已对一些与量子逻辑门设计和制造相关的专利进行了综述和引用。

方法

所有计算均基于含时哈密顿模型,利用稳态来获得传输概率。

结果

在弱耦合和强耦合 regime 中计算了传输概率、电流以及电流涨落的噪声功率。

结论

本研究为电子逻辑门的生产铺平了道路。

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