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花瓣状 MoS2 电极析氢反应活性的接触和支撑考虑因素。

Contact and Support Considerations in the Hydrogen Evolution Reaction Activity of Petaled MoS2 Electrodes.

机构信息

Department of Chemistry and Vanderbilt Institute for Nanoscale Science and Engineering, Vanderbilt University , Nashville, Tennessee 37235, United States.

出版信息

ACS Appl Mater Interfaces. 2016 Sep 28;8(38):25185-92. doi: 10.1021/acsami.6b05101. Epub 2016 Sep 13.

Abstract

Petaled MoS2 electrodes grown hydrothermally from Mo foils are found to have an 800 nm, intermediate, MoSxOy layer. Similar petaled MoS2 films without this intermediate layer are grown on Au. X-ray photoelectron and Raman spectroscopies and transmission electron microscopy indicate the resulting petaled multilayer MoS2 films are frayed and exhibit single-layer, 1T-MoS2 behavior at the edges. We compare the electrocatalytic hydrogen evolution reaction activity via linear sweep voltammetry with Tafel analysis as well as the impedance properties of the electrodes. We find that petaled MoS2/Au and petaled MoS2/Mo exhibit comparable overpotential to 10 mA cm(-2) at -279 vs -242 mV, respectively, and similar Tafel slopes of ∼68 mV/decade indicating a similar rate-determining step. The exchange current normalized to the geometric area of petaled MoS2/Au (0.000921 mA cm(-2)) is 3 times smaller than that of petaled MoS2/Mo (0.00290 mA cm(-2)), and is attributed to the lower petal density on the Au support. However, Au supports increase the turnover frequency per active site of petaled MoS2 to 0.48 H2 Mo(-1) s(-1) from 0.25 H2 Mo(-1) s(-1) on Mo supports. Both petaled MoS2 films have nearly ohmic contacts to their supports with uncompensated resistivity Ru of <2.5 Ω·cm(2).

摘要

水热法从 Mo 箔生长的花瓣状 MoS2 电极具有 800nm 的中间 MoSxOy 层。在 Au 上生长的没有这种中间层的类似花瓣状 MoS2 薄膜。X 射线光电子能谱和拉曼光谱以及透射电子显微镜表明,所得的花瓣状多层 MoS2 薄膜磨损,并在边缘处表现出单层 1T-MoS2 行为。我们通过线性扫描伏安法和塔菲尔分析比较了电催化析氢反应活性以及电极的阻抗特性。我们发现,花瓣状 MoS2/Au 和花瓣状 MoS2/Mo 的过电势分别在-279 与-242 mV 时达到 10 mA cm(-2),且 Tafel 斜率相似,约为 68 mV/decade,表明具有相似的速率决定步骤。花瓣状 MoS2/Au 的交换电流密度归一化为几何面积(0.000921 mA cm(-2))是花瓣状 MoS2/Mo 的 1/3(0.00290 mA cm(-2)),这归因于 Au 载体上较低的花瓣密度。然而,Au 载体将花瓣状 MoS2 的每个活性位点的周转频率从 Mo 载体上的 0.25 H2 Mo(-1) s(-1)增加到 0.48 H2 Mo(-1) s(-1)。两个花瓣状 MoS2 薄膜与其支撑体之间几乎呈欧姆接触,未补偿电阻率 Ru<2.5 Ω·cm(2)。

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