Department of Chemistry, Technical University of Munich, Lichtenbergstr. 4, 85748, Garching b. München, Germany.
Institut für Anorganische und Analytische Chemie, Westfälische Wilhelms-Universität Münster, Corrensstr. 30, 48149, Münster, Germany.
Adv Mater. 2016 Nov;28(44):9783-9791. doi: 10.1002/adma.201603135. Epub 2016 Sep 14.
SnIP is the first atomic-scale double helical semiconductor featuring a 1.86 eV bandgap, high structural and mechanical flexibility, and reasonable thermal stability up to 600 K. It is accessible on a gram scale and consists of a racemic mixture of right- and left-handed double helices composed by [SnI] and [P] helices. SnIP nanorods <20 nm in diameter can be accessed mechanically and chemically within minutes.
SnIP 是首个具有 1.86eV 带隙的原子级双螺旋半导体，具有高结构和机械灵活性，以及高达 600K 的合理热稳定性。它可在克级规模上获得，由[SnI]和[P]螺旋组成的右旋和左旋双螺旋的外消旋混合物组成。SnIP 纳米棒的直径可以在几分钟内通过机械和化学方法达到<20nm。
