Department of Physics, Southeast University , Nanjing 211189, China.
ACS Appl Mater Interfaces. 2016 Oct 5;8(39):26213-26219. doi: 10.1021/acsami.6b08110. Epub 2016 Sep 26.
A low-temperature hydrothermal route has been developed, and pure phase BaNiF nanowires have been successfully prepared under optimized conditions. Under the 325 nm excitation, the BaNiF nanowires exhibit three emission bands with peak positions locating at 360, 530, and 700 nm, respectively. Combined with the first-principles calculations, the photoluminescence property can be explained by the electron transitions between the t and e orbitals. Clear hysteresis loops observed below the temperature of 60 K demonstrates the weak ferromagnetism in BaNiF nanowires, which has been attributed to the surface strain of nanowires. Exchange bias with blocking temperature of 55 K has been observed, which originates from the magnetization pinning under the cooling field due to antiferromagnetic core/weak ferromagnetic shell structure of BaNiF nanowires.
一种低温水热法已被开发出来,并在优化条件下成功制备出纯相 BaNiF 纳米线。在 325nm 的激发下,BaNiF 纳米线呈现出三个发射带,其峰值位置分别位于 360nm、530nm 和 700nm。结合第一性原理计算,光致发光性能可以用 t 和 e 轨道之间的电子跃迁来解释。在 60K 以下的温度下观察到明显的磁滞回线,表明 BaNiF 纳米线具有弱铁磁性,这归因于纳米线的表面应变。观察到具有 55K 阻塞温度的交换偏置,这源于由于 BaNiF 纳米线的反铁磁芯/弱铁磁壳结构,在冷却场下磁化钉扎导致的交换偏置。