Audo Kévin, Amili Abdelkrim El, Baili Ghaya, Dolfi Daniel, Alouini Mehdi
Opt Lett. 2016 Sep 15;41(18):4237-40. doi: 10.1364/OL.41.004237.
We demonstrate experimentally a significant reduction of the remaining excess intensity noise in a class-A semi-conductor laser. This is obtained by inserting into the laser cavity a buffer reservoir mechanism based on two-photon absorption in GaAs. The excess noise peaks at the laser-free spectral range, induced by the beating between the lasing mode and the amplified spontaneous emission in the adjacent non-oscillating modes, is reduced by 20 dB, while preserving the class-A dynamical behavior of the laser cavity.
我们通过实验证明，在A类半导体激光器中，剩余的过量强度噪声有显著降低。这是通过在激光腔中插入一种基于GaAs中双光子吸收的缓冲储存机制来实现的。在无激光光谱范围内，由激射模式与相邻非振荡模式中的放大自发辐射之间的拍频引起的过量噪声峰值降低了20 dB，同时保持了激光腔的A类动力学行为。
