Physikalisches Institut, Experimentelle Physik II, Universität Würzburg Am Hubland, 97074, Würzburg, Germany.
V.S. Sobolev Institute of Geology and Mineralogy, Siberian Branch Russian Academy of Sciences, 630090, Novosibirsk, Russia.
Adv Mater. 2016 Dec;28(45):10073-10078. doi: 10.1002/adma.201602413. Epub 2016 Sep 28.
The effective gating of topological insulators is demonstrated, through the coupling of molecules to their surface. By using electric fields, they allow for dynamic control of the interface charge state by adding or removing single electrons. This process creates a robust transconductance bistability resembling a single-electron transistor. These findings make hybrid molecule/topological interfaces functional elements while at the same time pushing miniaturization to its ultimate limit.
通过分子与表面的耦合，成功实现了拓扑绝缘体的有效门控。通过施加电场，可以通过添加或去除单个电子来动态控制界面电荷状态。这一过程产生了类似于单电子晶体管的稳健电导双稳性。这些发现使混合分子/拓扑界面成为功能元件，同时将小型化推向了极限。
