Key Lab of Organic Optoelectronics & Molecular Engineering, Department of Chemistry, Tsinghua University, Beijing, 100084, People's Republic of China. Kunshan New Flat Panel Display Technology Center Co., Ltd., Kunshan, 215300, People's Republic of China.
Nanotechnology. 2016 Nov 18;27(46):465204. doi: 10.1088/0957-4484/27/46/465204. Epub 2016 Oct 19.
Thin-film transistors (TFTs) with high mobility and good uniformity are attractive for next-generation flat panel displays. In this work, solution-processed polycrystalline zinc tin oxide (ZTO) thin film with well-ordered microstructure is prepared, thanks to the synergistic effect of water addition and step heating. The step heating treatment other than direct annealing induces crystallization, while adequate water added to precursor solution further facilitates alloying and densification process. The optimal polycrystalline ZTO film is free of hierarchical sublayers, and featured with an increased amount of ternary phases, as well as a decreased fraction of oxygen vacancies and hydroxides. TFT devices based on such an active layer exhibit a remarkable field-effect mobility of 52.5 cm V s, a current on/off ratio of 2 × 10, a threshold voltage of 2.32 V, and a subthreshold swing of 0.36 V dec. Our work offers a facile method towards high-performance solution-processed polycrystalline metal oxide TFTs.
具有高迁移率和良好均匀性的薄膜晶体管（TFTs）对于下一代平板显示器具有吸引力。在这项工作中，得益于加水和分步加热的协同效应，制备出了具有有序微结构的溶液处理多晶氧化锡锌（ZTO）薄膜。分步加热处理而不是直接退火会诱导结晶，而在前驱体溶液中加入适量的水则进一步促进了合金化和致密化过程。最佳的多晶 ZTO 薄膜没有分层亚层，具有更多的三元相，以及更少的氧空位和氢氧化物。基于这种有源层的 TFT 器件表现出显著的场效应迁移率为 52.5cmV s，电流开关比为 2×10，阈值电压为 2.32V，亚阈值摆幅为 0.36V dec。我们的工作为高性能溶液处理多晶金属氧化物 TFTs 提供了一种简便的方法。
