Key Lab of Organic Optoelectronics & Molecular Engineering of Ministry of Education, Department of Chemistry, Tsinghua University , Beijing 100084, P. R. China.
ACS Appl Mater Interfaces. 2014 Dec 10;6(23):20786-94. doi: 10.1021/am5050295. Epub 2014 Nov 19.
Solution-processed metal oxide thin-film transistors (TFTs) operating in enhancement mode are promising for the next-generation flat panel displays. In this work, we report high-mobility TFTs based on SnO2 active layer derived from a soluble tin(II) 2-ethylhexanoate precursor. Densely packed polycrystalline SnO2 thin films with moderate oxygen vacancies and only a few hydroxides are obtained via systemically optimizing precursor concentrations and processing conditions. The utilization of a solution-processed high-κ Al2O3 insulating layer could generate a coherent dielectric/semiconductor interface, hence further improving the device performance. TFT devices with an average field-effect mobility of 96.4 cm(2) V(-1) s(-1), a current on/off ratio of 2.2 × 10(6), a threshold voltage of 1.72 V, and a subthreshold swing of 0.26 V dec(-1) have been achieved, and the driving capability is demonstrated by implementing a single SnO2 TFT device to tune the brightness of an organic light-emitting diode. It is worth noting that these TFTs work in enhancement mode at low voltages less than 4 V, which sheds light on their potential application to the next-generation low-cost active matrix flat panel displays.
溶液处理的金属氧化物薄膜晶体管（TFTs）在增强模式下工作，有望成为下一代平板显示器的首选。在这项工作中，我们报告了基于 SnO2 有源层的高迁移率 TFTs，SnO2 有源层由可溶性锡（II）2-乙基己酸酯前体制备。通过系统优化前体浓度和处理条件，得到了具有中等氧空位和少量氢氧化物的致密多晶 SnO2 薄膜。采用溶液处理的高介电常数 Al2O3 绝缘层可以产生相干的介电/半导体界面，从而进一步提高器件性能。具有平均场效应迁移率为 96.4 cm2 V-1 s-1、电流开关比为 2.2×106、阈值电压为 1.72 V 和亚阈值摆幅为 0.26 V dec-1 的 TFT 器件已经实现，通过实施单个 SnO2 TFT 器件来调节有机发光二极管的亮度，展示了其驱动能力。值得注意的是，这些 TFTs 在低至 4 V 以下的电压下以增强模式工作，这为它们在下一代低成本有源矩阵平板显示器中的潜在应用提供了启示。
