Matière Condensée et Systèmes Electroactifs (MaCSE), Institut des Sciences Chimiques de Rennes (ISCR), UMR 6226 CNRS and ‡ScanMAT-CMEBA, Université de Rennes 1 , Campus de Beaulieu, 35042 Rennes Cedex, France.
Langmuir. 2016 Nov 15;32(45):11728-11735. doi: 10.1021/acs.langmuir.6b02122. Epub 2016 Nov 4.
The electroless deposition of Pt nanoparticles (NPs) on hydrogen-terminated silicon (H-Si) surfaces is studied as a function of the temperature and the immersion time. It is demonstrated that isolated Pt structures can be produced at all investigated temperatures (between 22 and 75 °C) for short deposition times, typically within 1-10 min if the temperature is 45 °C or less than 5 min at 75 °C. For longer times, dendritic metal structures start to grow, ultimately leading to highly rough interconnected Pt networks. Upon increasing the temperature from 22 to 75 °C and for an immersion time of 5 min, the average size of the observed Pt NPs monotonously increases from 120 to 250 nm, and their number density calculated using scanning electron microscopy decreases from (4.5 ± 1.0) × 10 to (2.0 ± 0.5) × 10 Pt NPs cm. The impact of both the morphology and the distribution of the Pt NPs on the photoelectrocatalytic activity of the resulting metallized photocathodes is then analyzed. Pt deposited at 45 °C for 5 min yields photocathodes with the best electrocatalytic activity for the hydrogen evolution reaction. Under illumination at 33 mW cm, this optimized photoelectrode shows a fill factor of 45%, an efficiency (η) of 9.7%, and a short-circuit current density (|J|) at 0 V versus a reversible hydrogen electrode of 15.5 mA cm.
在不同温度和浸泡时间下,研究了无电沉积 Pt 纳米颗粒 (NPs) 在氢终止硅 (H-Si) 表面上的沉积情况。结果表明,在所有研究的温度下(22 至 75°C 之间),如果沉积时间较短(典型值为 1-10 分钟,如果温度低于 45°C,则小于 5 分钟),可以生成孤立的 Pt 结构。对于较长的时间,枝晶状金属结构开始生长,最终导致高度粗糙的互连 Pt 网络。当温度从 22°C 升高到 75°C 且浸泡时间为 5 分钟时,观察到的 Pt NPs 的平均尺寸从 120nm 单调增加到 250nm,使用扫描电子显微镜计算的其数密度从(4.5±1.0)×10Pt NPs cm 降低到(2.0±0.5)×10Pt NPs cm。然后分析了所得金属化光阴极中 Pt NPs 的形态和分布对光电催化活性的影响。在 45°C 下沉积 5 分钟的 Pt 生成的光阴极对析氢反应具有最佳的电催化活性。在 33mW cm 的光照下,优化后的光电极的填充因子为 45%,效率(η)为 9.7%,在 0V 相对于可逆氢电极的短路电流密度(|J|)为 15.5mA cm。