Lo Vecchio I, Denlinger J D, Krupin O, Kim B J, Metcalf P A, Lupi S, Allen J W, Lanzara A
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA.
Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA.
Phys Rev Lett. 2016 Oct 14;117(16):166401. doi: 10.1103/PhysRevLett.117.166401. Epub 2016 Oct 11.
Using angle resolved photoemission spectroscopy, we report the first band dispersions and distinct features of the bulk Fermi surface (FS) in the paramagnetic metallic phase of the prototypical metal-insulator transition material V_{2}O_{3}. Along the c axis we observe both an electron pocket and a triangular holelike FS topology, showing that both V 3d a_{1g} and e_{g}^{π} states contribute to the FS. These results challenge the existing correlation-enhanced crystal field splitting theoretical explanation for the transition mechanism and pave the way for the solution of this mystery.
利用角分辨光电子能谱，我们首次报道了典型金属 - 绝缘体转变材料V₂O₃顺磁金属相中的能带色散和体费米面（FS）的独特特征。沿着c轴，我们观察到一个电子口袋和一个三角形的空穴状FS拓扑结构，表明V 3d的a₁g和e₉^π态都对FS有贡献。这些结果挑战了现有的关于转变机制的关联增强晶体场分裂理论解释，并为解开这个谜团铺平了道路。
