SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University , Shenzhen 518060, China.
Physical Science and Engineering Division, King Abdullah University of Science and Technology , Thuwal 23955-6900, Kingdom of Saudi Arabia.
ACS Nano. 2016 Nov 22;10(11):10516-10523. doi: 10.1021/acsnano.6b06496. Epub 2016 Nov 3.
Two-dimensional transition metal dichalcogenides (TMDCs) have shown great promise in electronics and optoelectronics due to their unique electrical and optical properties. Heterostructured TMDC layers such as the laterally stitched TMDCs offer the advantages of better electronic contact and easier band offset tuning. Here, we demonstrate a photoresist-free focused ion beam (FIB) method to pattern as-grown TMDC monolayers by chemical vapor deposition, where the exposed edges from FIB etching serve as the seeds for growing a second TMDC material to form desired lateral heterostructures with arbitrary layouts. The proposed lithographic and growth processes offer better controllability for fabrication of the TMDC heterostrucuture, which enables the construction of devices based on heterostructural monolayers.
二维过渡金属二卤族化合物（TMDCs）由于其独特的电学和光学性质，在电子学和光电学领域表现出巨大的潜力。例如，横向缝合 TMDC 等异质结构 TMDC 层具有更好的电子接触和更容易的能带偏移调谐的优点。在这里，我们展示了一种无光刻胶的聚焦离子束（FIB）方法，通过化学气相沉积对生长的 TMDC 单层进行图案化，其中 FIB 刻蚀的暴露边缘充当生长第二种 TMDC 材料的种子，以形成具有任意布局的所需横向异质结构。所提出的光刻和生长工艺为 TMDC 异质结构的制造提供了更好的可控性，从而能够构建基于异质结构单层的器件。
