Plokhikh Igor V, Charkin Dmitri O, Verchenko Valeriy Yu, Kuznetsov Alexey N, Kazakov Sergey M, Tsirlin Alexander A, Shevelkov Andrei V
Department of Chemistry, Lomonosov Moscow State University , 119991 Moscow, Russia.
National Institute of Chemical Physics and Biophysics , 12618 Tallinn, Estonia.
Inorg Chem. 2016 Dec 5;55(23):12409-12418. doi: 10.1021/acs.inorgchem.6b02297. Epub 2016 Nov 21.
Two new compounds with the LaOAgS structure, EuFZnAs (1) and EuFZnSb (2), were obtained via solid state reaction. Both compounds are tetragonal (P4/nmm) with the cell parameters a = 4.1000(1) Å and c = 9.0811(1) Å for 1 and a = 4.2852(1)Å and c = 9.4238(1)Å for 2. The absence of their phosphide analog can be explained based on crystal chemical considerations as well as on quantum-chemical estimates of their thermodynamic stability with respect to EuF and EuZnPn. The magnetic response of 1 and 2 is ascribed to the presence of Eu ions. Both compounds are paramagnetic down to low temperatures, where they order antiferromagnetically at ∼5 K and ∼3 K, respectively. They are narrow-gap semiconductors, and EuFZnSb demonstrates a relatively high value of the Seebeck coefficient.
通过固态反应获得了两种具有LaOAgS结构的新化合物，EuFZnAs（1）和EuFZnSb（2）。两种化合物均为四方晶系（P4/nmm），化合物1的晶胞参数为a = 4.1000(1) Å，c = 9.0811(1) Å；化合物2的晶胞参数为a = 4.2852(1) Å，c = 9.4238(1) Å。它们不存在磷化物类似物，可以基于晶体化学考虑以及它们相对于EuF和EuZnPn的热力学稳定性的量子化学估计来解释。化合物1和2的磁响应归因于Eu离子的存在。两种化合物在低温下均为顺磁性，分别在约5 K和约3 K时发生反铁磁有序。它们是窄带隙半导体，并且EuFZnSb表现出相对较高的塞贝克系数。
