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硫化锡基纳米板光电极上的开关光电流

Switched Photocurrent on Tin Sulfide-Based Nanoplate Photoelectrodes.

作者信息

Chen Hongjun, Lyu Miaoqiang, Zhang Meng, Feron Krishna, Searles Debra J, Dargusch Matthew, Yao Xiangdong, Wang Lianzhou

机构信息

Nanomaterials Centre, School of Chemical Engineering and Australian, Institute for Bioengineering and Nanotechnology, The University of Queensland, Brisbane, QLD, 4072, Australia.

CSIRO Energy, Newcastle, NSW 2300, Australia.

出版信息

ChemSusChem. 2017 Feb 22;10(4):670-674. doi: 10.1002/cssc.201601603. Epub 2017 Jan 27.

Abstract

A new type of SnS nanoplate photoelectrode is prepared by using a mild wet-chemical method. Depending on the calcination temperatures, SnS -based photoelectrodes can either retain their n-type nature with greatly enhanced anodic photocurrent density (ca. 1.2 mA cm at 0.8 V vs. Ag/AgCl) or be completely converted into p-type SnS to generate approximately 0.26 mA cm cathodic photocurrent density at -0.8 V vs. Ag/AgCl. The dominance of sulfur and tin vacancies are found to account for the dramatically different photoelectrochemical behaviors of n-type SnS and p-type SnS photoelectrodes. In addition, the band structures of n-type SnS and p-type SnS photoelectrodes are also deduced, which may provide an effective strategy for developing SnS /SnS films with controllable energy-band levels through a simple calcination treatment.

摘要

采用温和的湿化学方法制备了一种新型的硫化锡纳米片光电极。根据煅烧温度的不同,基于硫化锡的光电极要么保持其n型性质,同时阳极光电流密度大幅增强(在0.8 V相对于Ag/AgCl时约为1.2 mA cm),要么完全转变为p型硫化锡,在-0.8 V相对于Ag/AgCl时产生约0.26 mA cm的阴极光电流密度。研究发现,硫和锡空位的主导作用导致了n型硫化锡和p型硫化锡光电极截然不同的光电化学行为。此外,还推导了n型硫化锡和p型硫化锡光电极的能带结构,这可能为通过简单的煅烧处理开发具有可控能带水平的硫化锡/SnS薄膜提供一种有效策略。

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