采用喷雾热解法制备的纳米结构掺锡银铟硫（2）薄膜的结构和光电化学评价。

Structural and photoelectrochemical evaluation of nanotextured Sn-doped AgInS(2) films prepared by spray pyrolysis.

机构信息

Materials Science and Engineering, School for Engineering of Matter, Transport, and Energy, Arizona State University, Tempe, AZ 85287, USA.

出版信息

ChemSusChem. 2013 Jan;6(1):102-9. doi: 10.1002/cssc.201200588. Epub 2012 Dec 23.

DOI:10.1002/cssc.201200588

PMID:23281310

Abstract

Spray pyrolysis was used to prepare films of AgInS(2) (AIS) with and without Sn as an extrinsic dopant. The photoelectrochemical performance of these films was evaluated after annealing under a N(2) or S atmosphere with different amounts of the Sn dopant. DFT was used to calculate the band structure of AIS and understand the role of Sn doping in the observed properties. All AIS films were n-type, and Sn was found to increase the photocurrent and carrier concentration of AIS with an optimum doping level of x=[Sn]/([Ag]+[In])=0.02, which gave a photocurrent of 4.85 mA cm(-2). Above this level, the Sn dopants were detrimental to the photoelectrochemical performance, likely a result of a self-compensating effect and the introduction of a deep acceptor level, which could act as a recombination site for photogenerated carriers.

摘要

喷雾热解法被用于制备含有和不含有 Sn 作为外掺杂剂的 AgInS(2) (AIS) 薄膜。在不同 Sn 掺杂量的 N(2)或 S 气氛下退火后，评估了这些薄膜的光电化学性能。DFT 被用于计算 AIS 的能带结构，并理解 Sn 掺杂在观察到的性质中的作用。所有 AIS 薄膜均为 n 型，并且发现 Sn 能够提高 AIS 的光电流和载流子浓度，最佳掺杂水平为 x=[Sn]/([Ag]+[In])=0.02，此时光电流为 4.85 mA cm(-2)。在这个水平以上，Sn 掺杂剂对光电化学性能不利，这可能是自补偿效应和引入深受主能级的结果，深受主能级可能充当光生载流子的复合位点。